Isiseko seSiC sokufaka ifilimu yeCVD

Isiseko se-SiC sokwambathisa ifilimu ye-CVD Umfanekiso oPhambili

Inkcazo emfutshane:

Ukususwa koMphunga weKhemikhali I-oxide yokufakwa komphunga weKhemikhali (i-CVD) yinkqubo yokukhula ethe tye apho igesi engaphambili ifaka ifilimu encinci kwi-wafer kwi-reactor. Inkqubo yokukhula iphantsi kwaye inezinga lokukhula eliphezulu xa ithelekiswa ne-oxide yobushushu. Ikwavelisa iileya ze-silicon dioxide ezincinci kakhulu kuba ifilimu isusiwe, endaweni yokuba ikhuliswe. Le nkqubo ivelisa ifilimu enokumelana nombane okuphezulu, elungele ukusetyenziswa kwizixhobo ze-IC kunye ne-MEMS, phakathi kwezinye ezininzi...

Izibuko:Weifang okanye Qingdao

Ubulukhuni obutsha beMohs: 13

Izinto eziphambili zokwenza imveliso:iSilicon Carbide

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Iinkcukacha zeMveliso

I-ZPC - umenzi we-silicon carbide ceramic

Iithegi zeMveliso

Ukususwa komphunga weekhemikhali

I-oxide ye-chemical vapor deposition (CVD) yinkqubo yokukhula ethe tyaba apho igesi engaphambili ifaka ifilimu encinci kwi-wafer kwi-reactor. Inkqubo yokukhula iphantsi kwaye inesantya sokukhula esiphezulu kakhulu xa ithelekiswa ne-i-okside ye-thermalIkwavelisa iileya ezincinci kakhulu ze-silicon dioxide kuba ifilimu iyasuswa, endaweni yokuba ikhuliswe. Le nkqubo ivelisa ifilimu enokumelana okuphezulu kombane, elungele ukusetyenziswa kwizixhobo ze-IC kunye ne-MEMS, phakathi kwezinye izinto ezininzi.

I-oxide ye-chemical vapor deposition (CVD) yenziwa xa kufuneka umaleko wangaphandle kodwa i-silicon substrate isenokungakwazi uku-oxidized.

Ukukhula kokutsalwa komphunga weekhemikhali:

Ukukhula kwe-CVD kwenzeka xa igesi okanye umphunga (i-precursor) ufakwa kwi-reactor yobushushu obuphantsi apho ii-wafers zibekwe ngokuthe nkqo okanye ngokuthe tye. Igesi ihamba kwinkqubo kwaye isasazeke ngokulinganayo kumphezulu wee-wafers. Njengoko ezi precursors zihamba kwi-reactor, ii-wafers ziqala ukuzifunxa kumphezulu wazo.

Nje ukuba izinto ezisandul’ ukwenzeka zisasazeke ngokulinganayo kuyo yonke inkqubo, ii-chemical reactions ziqala phezu komphezulu we-substrates. Ezi chemical reactions ziqala njengeziqithi, kwaye njengoko inkqubo iqhubeka, iziqithi ziyakhula kwaye zidibana ukuze zenze ifilimu efunekayo. Ii-chemical reactions zenza ii-biproducts kumphezulu wee-wafers, ezisasazeka ngaphaya komaleko womda kwaye ziphume kwi-reactor, zishiya ii-wafers kuphela ezine-film coating yazo egciniweyo.

Umfanekiso 1

(1.) Igesi/Umphunga uqala ukusabela uze wenze iziqithi kumphezulu we-substrate. (2.) Iziqithi ziyakhula kwaye ziqala ukudibana. (3.) Ifilimu eqhubekayo, efanayo yenziwe.

Iingenelo zokufakwa komphunga wekhemikhali:

Inkqubo yokukhula kobushushu obuphantsi.
Izinga lokufakwa ngokukhawuleza (ingakumbi i-APCVD).
Akunyanzelekanga ukuba ibe yi-silicon substrate.
Ukugubungela amanyathelo okuhle (ingakumbi i-PECVD).

Umfanekiso 2
Ukugcinwa kwe-silicon dioxide xa kuthelekiswa nokukhula

Ukuze ufumane ulwazi oluthe kratya malunga nokufakwa komphunga weekhemikhali okanye ukucela ikowuteshini, ncedaQhagamshelana ne-SVMnamhlanje ukuthetha nelungu leqela lethu lokuthengisa.

Iintlobo ze-CVD

I-LPCVD

Ukufakwa komphunga weekhemikhali oxinzelelo oluphantsi yinkqubo eqhelekileyo yokufakwa komphunga weekhemikhali ngaphandle koxinzelelo. Umahluko omkhulu phakathi kwe-LPCVD kunye nezinye iindlela ze-CVD bubushushu bokufakwa. I-LPCVD isebenzisa ubushushu obuphezulu ukufaka iifilimu, ngesiqhelo ngaphezulu kwama-600°C.

Indawo enoxinzelelo oluphantsi idala ifilimu efanayo kakhulu enobunyulu obuphezulu, ukuphinda-phinda, kunye nokulingana. Oku kwenziwa phakathi kwe-10 ukuya kwi-1,000 Pa, ngelixa uxinzelelo oluqhelekileyo lwegumbi liyi-101,325 Pa. Ubushushu bumisela ubukhulu kunye nobunyulu bezi filimu, kwaye amaqondo obushushu aphezulu abangela iifilimu ezityebileyo nezicocekileyo.

Iifilimu eziqhelekileyo ezifakwe:i-polysilicon, ii-oxides ezixutyiweyo nezingaxutywanga,ii-nitrides.

I-PECVD

Ukufakwa komphunga wekhemikhali ophuculweyo kwiplasma yindlela yokubeka ubushushu obuphantsi, kunye noxinano oluphezulu lwefilimu. I-PECVD yenzeka kwi-CVD reactor ngokongeza i-plasma, eyigesi ene-ion eyinxalenye enomxholo ophezulu we-electron (~50%). Le yindlela yokubeka ubushushu obuphantsi eyenzeka phakathi kwe-100°C - 400°C. I-PECVD inokwenziwa kumaqondo obushushu aphantsi kuba amandla avela kwii-electron ezikhululekileyo ayahlukanisa iigesi ezisebenzayo ukuze zenze ifilimu kumphezulu we-wafer.

Le ndlela yokufaka isebenzisa iintlobo ezimbini ezahlukeneyo ze-plasma:

Ukubanda (okungashushu): ii-elektroni zinobushushu obuphezulu kunee-particles ezingathathi cala kunye nee-ions. Le ndlela isebenzisa amandla ee-elektroni ngokutshintsha uxinzelelo kwigumbi lokubeka.
Ubushushu: ii-electron zifana nobushushu bee-particles kunye nee-ions ezikwigumbi lokubeka.

Ngaphakathi kwigumbi lokubeka, i-radio-frequency voltage ithunyelwa phakathi kwee-electrodes ezingaphezulu nangaphantsi kwe-wafer. Oku kutshaja ii-electron kwaye kuzigcina zikwimeko entle ukuze zifake ifilimu oyifunayo.

Kukho amanyathelo amane okukhulisa iifilimu ngePECVD:

Beka i-target wafer kwi-electrode ngaphakathi kwigumbi lokufaka.
Faka iigesi ezisabelayo kunye nezinto zokubeka izinto kwigumbi.
Thumela iplasma phakathi kwee-electrodes uze ufake i-voltage ukuze uvuselele iplasma.
Igesi ephendulayo iyahlukana ize idibane nomphezulu we-wafer ukuze yenze ifilimu encinci, iimveliso eziphumayo ziyasasazeka ziphume kwigumbi.

Iifilimu eziqhelekileyo ezifakwe apha: ii-silicon oxides, i-silicon nitride, i-silicon engenasimo,ii-silicon oxynitrides (Si_xO_yN_z).

I-APCVD

Ukufakwa komphunga wekhemikhali yoxinzelelo lomoya yindlela yokufakwa kobushushu obuphantsi eyenzeka kwisithando somlilo kuxinzelelo oluqhelekileyo lomoya. Njengezinye iindlela ze-CVD, i-APCVD ifuna igesi yangaphambili ngaphakathi kwigumbi lokufakwa, emva koko ubushushu bunyuka kancinci ukuze kukhuthazwe iimpembelelo kumphezulu we-wafer kwaye kufakwe ifilimu encinci. Ngenxa yobulula bale ndlela, inezinga eliphezulu kakhulu lokufakwa.

Iifilimu eziqhelekileyo ezifakwe apha: ii-silicon oxides ezifakwe apha naphaya nezingafakwanga apha, ii-silicon nitrides. Zikwasetyenziswa kwiukucoca.

I-HDP CVD

Ukufakwa komphunga we-plasma chemical vapor density yinguqulelo ye-PECVD esebenzisa i-plasma enoxinano oluphezulu, evumela ii-wafers ukuba zenze ubushushu obuphantsi nangakumbi (phakathi kwama-80°C-150°C) kwigumbi lokufakwa. Oku kukwadala ifilimu enobuchule obukhulu bokugcwalisa imisele.

Iifilimu eziqhelekileyo ezifakwe apha: i-silicon dioxide (i-SiO2)₂), i-silicon nitride (i-Si₃N₄),i-silicon carbide (i-SiC).

I-SACVD

Ukufakwa komphunga weekhemikhali zoxinzelelo lwe-subatmospheric kwahlukile kwezinye iindlela kuba kwenzeka ngaphantsi koxinzelelo oluqhelekileyo lwegumbi kwaye kusetyenziswa i-ozone (O2).₃) ukunceda ekuvuseleleni impendulo. Inkqubo yokubeka i-atom yenzeka kuxinzelelo oluphezulu kune-LPCVD kodwa ingaphantsi kune-APCVD, phakathi kwe-13,300 Pa kunye ne-80,000 Pa. Iifilimu ze-SACVD zinezinga eliphezulu lokubeka i-atom tom kwaye eziphucula njengoko ubushushu busanda ukuya kuthi ga kwi-490°C, apho iqala ukwehla khona.

Iifilimu eziqhelekileyo ezifakwe:I-BPSG, i-PSG,I-TEOS.

Ngaphambili: Umbhobho wentsimbi enophahla lwe-SiC ceramic

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I-Shandong Zhongpeng Special Ceramics Co., Ltd yenye yezona zisombululo zinkulu zezinto ezintsha ze-silicon carbide ceramic eTshayina. I-SiC technical ceramic: Ubunzima bukaMoh buyi-9 (Ubunzima bukaMoh obuyi-13), bunokumelana okuhle nokukhukuliseka kunye nokugqwala, ukukrala okugqwesileyo - ukumelana nokubola kunye nokuchasana ne-oxidation. Ubomi benkonzo yemveliso yeSiC bubude obuphindwe ka-4 ukuya ku-5 kune-92% ye-alumina material. I-MOR ye-RBSiC iphindwe ka-5 ukuya ku-7 kune-SNBSC, ingasetyenziselwa iimilo ezinzima ngakumbi. Inkqubo yokucaphula iyakhawuleza, ukuhanjiswa kunjengoko kuthembisiwe kwaye umgangatho awulingani. Sihlala siqhubeka nokuchasa iinjongo zethu kwaye sibuyisela iintliziyo zethu kuluntu.