ʻO ka substrate SiC no ka uhi ʻana i ka kiʻiʻoniʻoni CVD

Hoʻokahe ʻana o ka mahu kemika

ʻO ka oxide hoʻokaʻawale mahu kemika (CVD) kahi hana ulu linear kahi e waiho ai kahi kinoea precursor i kahi ʻili lahilahi ma luna o kahi wafer i loko o kahi reactor. He haʻahaʻa ka mahana o ke kaʻina ulu a ʻoi aku ka nui o ka ulu ʻana i ka hoʻohālikelike ʻia meʻokikene welaHoʻopuka pū ia i nā papa silicon dioxide lahilahi loa no ka mea ua hoʻoheheʻe ʻia ke kiʻiʻoniʻoni, ma mua o ka ulu ʻana. Hoʻopuka kēia kaʻina hana i kahi kiʻiʻoniʻoni me ke kū'ē uila kiʻekiʻe, he mea maikaʻi loa ia no ka hoʻohana ʻana i nā IC a me nā polokalamu MEMS, ma waena o nā noi ʻē aʻe he nui.

Hana ʻia ka chemical vapor deposition (CVD) oxide ke pono ai kahi papa waho akā ʻaʻole paha e hiki ke oxidized ʻia ka substrate silicon.

Ka ulu ʻana o ka hoʻokahe ʻana o ka mahu kemika:

Hoʻomaka ka ulu ʻana o CVD ke hoʻokomo ʻia kahi kinoea a mahu paha (precursor) i loko o kahi reactor haʻahaʻa haʻahaʻa kahi i hoʻonohonoho ʻia ai nā wafers ma ke ʻano kū pololei a i ʻole ka pae. Neʻe ke kinoea ma o ka ʻōnaehana a hoʻolaha like ʻia ma luna o ka ʻili o nā wafers. Ke neʻe kēia mau precursors ma o ka reactor, hoʻomaka nā wafers e omo iā lākou ma luna o ko lākou ʻili.

Ke hoʻolaha like ʻia nā precursors ma loko o ka ʻōnaehana, hoʻomaka nā hopena kemika ma ka ʻili o nā substrates. Hoʻomaka kēia mau hopena kemika ma ke ʻano he mau mokupuni, a i ka hoʻomau ʻana o ke kaʻina hana, ulu a hui pū nā mokupuni e hana i ke kiʻiʻoniʻoni i makemake ʻia. Hoʻokumu nā hopena kemika i nā biproducts ma ka ʻili o nā wafers, kahi e pālahalaha ana ma waena o ka papa palena a kahe i waho o ka reactor, e waiho ana i nā wafers me kā lākou uhi kiʻiʻoniʻoni i waiho ʻia.

Kiʻi 1

Nā Pōmaikaʻi o ka Hoʻokahe ʻana o ka Mahu Kemika:

• Ke kaʻina hana ulu mahana haʻahaʻa.
• Ka wikiwiki o ka waiho ʻana (ʻoi aku hoʻi ʻo APCVD).
• ʻAʻole pono e lilo i substrate silicon.
• Uhi maikaʻi i nā ʻanuʻu (ʻoi aku hoʻi ʻo PECVD).

Kiʻi 2
ʻO ka waiho ʻana o ka silicon dioxide vs. ka ulu ʻana

No ka ʻike hou aku e pili ana i ka waiho ʻana o ka mahu kemika a i ʻole e noi i kahi ʻōlelo kūʻai, e ʻoluʻoluE HOʻOPILI I KA SVMi kēia lā e kamaʻilio me kekahi lālā o kā mākou hui kūʻai aku.

Nā ʻano o CVD

LPCVD

ʻO ka waiho ʻana o ka mahu kemika haʻahaʻa haʻahaʻa he hana waiho ʻana o ka mahu kemika maʻamau me ka ʻole o ke kaomi ʻana. ʻO ka ʻokoʻa nui ma waena o LPCVD a me nā ʻano hana CVD ʻē aʻe, ʻo ia ka mahana o ka waiho ʻana. Hoʻohana ʻo LPCVD i ka mahana kiʻekiʻe loa e waiho i nā kiʻiʻoniʻoni, ma luna o 600°C.

Hoʻokumu ke kaiapuni haʻahaʻa i kahi kiʻiʻoniʻoni like loa me ka maʻemaʻe kiʻekiʻe, ka hiki ke hana hou ʻia, a me ka homogeneity. Hana ʻia kēia ma waena o 10 - 1,000 Pa, ʻoiai ʻo ke kaomi lumi maʻamau he 101,325 Pa. Hoʻoholo ka mahana i ka mānoanoa a me ka maʻemaʻe o kēia mau kiʻiʻoniʻoni, me nā mahana kiʻekiʻe e hopena ana i nā kiʻiʻoniʻoni mānoanoa a ʻoi aku ka maʻemaʻe.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia:polysilicon, nā ʻokikene i hoʻohuihui ʻia a me nā ʻokikene i hoʻohuihui ʻole ʻia,nā nitrides.

PECVD

ʻO ka hoʻokomo ʻana o ka mahu kemika i hoʻonui ʻia i ka plasma he ʻano hana hoʻokomo ʻiliʻili haʻahaʻa a kiʻekiʻe hoʻi. Hana ʻia ka PECVD i loko o kahi reactor CVD me ka hoʻohui ʻana o ka plasma, he kinoea ionized hapa me ka nui o ka electron manuahi (~50%). He ʻano hana hoʻokomo ʻiliʻili haʻahaʻa kēia e hana ʻia ma waena o 100°C - 400°C. Hiki ke hana ʻia ka PECVD ma nā mahana haʻahaʻa no ka mea ʻo ka ikehu mai nā electrons manuahi e hoʻokaʻawale i nā kinoea reactive e hana i kahi kiʻiʻoniʻoni ma ka ʻili wafer.

Hoʻohana kēia ʻano hoʻokaʻawale ʻana i ʻelua ʻano plasma like ʻole:

1. Anuanu (ʻaʻole wela): ʻoi aku ka mahana o nā electrons ma mua o nā ʻāpana kūlike ʻole a me nā ions. Hoʻohana kēia ʻano hana i ka ikehu o nā electrons ma ka hoʻololi ʻana i ke kaomi i loko o ke keʻena waiho.
2. Thermal: ua like ka mahana o nā electrons me nā ʻāpana a me nā ions i loko o ke keʻena waiho.

I loko o ke keʻena waiho ʻana, hoʻouna ʻia ke anakahi uila alapine lekiō ma waena o nā electrodes ma luna a ma lalo o ka wafer. Hoʻopiʻi kēia i nā electrons a mālama iā lākou i kahi kūlana hoʻonāukiuki i mea e waiho ai i ke kiʻiʻoniʻoni i makemake ʻia.

ʻEhā mau ʻanuʻu no ka hoʻoulu ʻana i nā kiʻiʻoniʻoni ma o PECVD:

1. E kau i ka wafer pahuhopu ma luna o kahi electrode i loko o ke keʻena waiho.
2. E hoʻokomo i nā kinoea reactive a me nā mea hoʻopili i loko o ke keʻena.
3. E hoʻouna i ka plasma ma waena o nā electrodes a hoʻopili i ke uila e hoʻonāukiuki i ka plasma.
4. Hoʻokaʻawale ke kinoea reactive a pane pū me ka ʻili wafer e hana i kahi ʻili lahilahi, hoʻolaha nā huahana byproducts i waho o ke keʻena.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia: silicon oxides, silicon nitride, amorphous silicon,nā silicon oxynitrides (Si_xO_yN_z).

APCVD

ʻO ka hoʻokahe ʻana o ka mahu kemika ma ke kaomi lewa he ʻano hana hoʻokahe haʻahaʻa wela ia e hana ʻia ana i loko o ka umu ma ke kaomi lewa maʻamau. E like me nā ʻano hana CVD ʻē aʻe, pono ʻo APCVD i kahi kinoea mua i loko o ke keʻena hoʻokahe, a laila piʻi mālie ka mahana e hoʻoulu i nā hopena ma ka ʻili wafer a waiho i kahi ʻili lahilahi. Ma muli o ka maʻalahi o kēia ʻano hana, he kiʻekiʻe loa ka helu hoʻokahe.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia: nā silicon oxides i hoʻohui ʻia a me nā mea i hoʻohui ʻole ʻia, nā silicon nitrides. Hoʻohana pū ʻia i lokohoʻomehana ʻana.

HDP CVD

ʻO ka hoʻokaʻawale ʻana o ka mahu kemika plasma kiʻekiʻe ka nui he mana ia o PECVD e hoʻohana ana i kahi plasma density kiʻekiʻe aʻe, kahi e hiki ai i nā wafers ke hana me kahi mahana haʻahaʻa loa (ma waena o 80°C-150°C) i loko o ke keʻena hoʻokaʻawale. Hoʻokumu pū kēia i kahi kiʻiʻoniʻoni me nā hiki ke hoʻopiha i nā ʻauwaha nui.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia: silicon dioxide (SiO₂), silicon nitride (Si₃N₄),silicon carbide (SiC).

SACVD

ʻOkoʻa ka waiho ʻana o ka mahu kemika ma ke kaomi subatmospheric mai nā ʻano hana ʻē aʻe no ka mea hana ia ma lalo o ke kaomi lumi maʻamau a hoʻohana i ka ozone (O₃) e kōkua i ka hoʻoulu ʻana i ka hopena. Hana ʻia ke kaʻina hana hoʻoili ma ke kaomi kiʻekiʻe ma mua o LPCVD akā haʻahaʻa ma mua o APCVD, ma waena o 13,300 Pa a me 80,000 Pa. Loaʻa i nā kiʻiʻoniʻoni SACVD kahi helu hoʻoili kiʻekiʻe a hoʻomaikaʻi ʻia i ka piʻi ʻana o ka mahana a hiki i kahi o 490°C, ma ia manawa e hoʻomaka ai e emi.

• Nā kiʻiʻoniʻoni maʻamau i waiho ʻia:BPSG, PSG,TEOS.

ʻO Shandong Zhongpeng Special Ceramics Co., Ltd kekahi o nā hoʻonā mea hou loa no ka silicon carbide ceramic ma Kina. ʻO ka keramika ʻenehana SiC: ʻO ka paʻakikī o Moh he 9 (ʻO ka paʻakikī o Moh hou he 13), me ke kūpaʻa maikaʻi loa i ka erosion a me ka corrosion, ke kūpaʻa abrasion maikaʻi loa a me ka anti-oxidation. ʻO ke ola lawelawe o ka huahana SiC he 4 a 5 mau manawa ka lōʻihi ma mua o 92% alumina mea. ʻO ka MOR o RBSiC he 5 a 7 mau manawa o SNBSC, hiki ke hoʻohana ʻia no nā ʻano paʻakikī. He wikiwiki ke kaʻina hana ʻōlelo, ʻo ka lawe ʻana e like me ka mea i hoʻohiki ʻia a ʻaʻohe lua o ka maikaʻi. Ke hoʻomau nei mākou i ka hoʻokūkū ʻana i kā mākou mau pahuhopu a hāʻawi i ko mākou mau naʻau i ke kaiāulu.