Uduce twa SiC two gutwikira firime ya CVD

Gushyira umwuka mu kirere mu buryo bwa "chemical ventilation"

Okiside yo gukuraho umwuka w’uburozi (CVD) ni inzira yo gukura ku murongo aho umwuka ubanza ushyira agace gato ku gasanduku kabigenewe mu cyuma gitera umwuka. Uburyo bwo gukura ni ubushyuhe buke kandi bufite igipimo cyo gukura kiri hejuru cyane ugereranije naokiside y'ubushyuhe.Ikora kandi ibice byoroheje cyane bya silikoni dioxyde kuko iyo firime iba yakuweho, aho gukurira. Iyi nzira ikora firime ifite ubushobozi bwo guhangana n'amashanyarazi menshi, ikaba ari nziza gukoreshwa muri za IC na MEMS, n'izindi porogaramu nyinshi.

Okiside yo kubika umwuka w’uburozi (CVD) ikorwa iyo hakenewe urwego rwo hanze ariko substrate ya silikoni ishobora kutabasha gukurwamo ogisijeni.

Iterambere ry'ingufu zikomoka ku binyabutabire:

Ikura rya CVD ribaho iyo umwuka cyangwa umwuka (precursor) byinjijwe mu cyuma gipima ubushyuhe buke aho wafers ziba zihagaze neza cyangwa zitambitse. Gazi inyura muri sisitemu kandi igakwirakwira ku buso bwa wafers. Uko izi wafers zigenda zinyura muri reactor, wafers zitangira kuzikurura ku buso bwazo.

Iyo ibintu byabanje bikwirakwiriye mu buryo bungana, imikorere ya shimi itangira ku buso bw'ibice by'ingenzi. Iyi myitwarire ya shimi itangira nk'ibirwa, kandi uko ibikorwa bikomeza, ibirwa birakura bikivanga kugira ngo bikore firime yifuzwa. imikorere ya shimi ikora ibicuruzwa bibiri ku buso bw'ibice by'ingenzi, bigakwirakwira mu rubibi rw'umupaka bigasohoka mu cyuma gitunganya amashanyarazi, bigasiga ibice by'ingenzi gusa bifite firime yabyo.

Igishushanyo cya 1

Ibyiza byo Gushyiramo Umwotsi w'Imyuka mu Binyabutabire:

• Uburyo bwo gukura kw'ubushyuhe buke.
• Igipimo cyihuse cyo gutanga imiti (cyane cyane APCVD).
• Ntabwo ari ngombwa ko biba ari substrate ya silikoni.
• Intambwe nziza zo gukwirakwiza (cyane cyane PECVD).

Igishushanyo cya 2
Gushyira silicon dioxide ugereranije n'ikura

Kugira ngo ubone amakuru arambuye ku bijyanye no gushyira umwuka w'ibinyabutabire mu kirere cyangwa gusaba ibiciro, nyamunekaTWANDIKIRE SVMuyu munsi kugira ngo mvugane n'umwe mu bagize itsinda ryacu ry'abacuruzi.

Ubwoko bw'indwara ya CVD

LPCVD

Gushyira umwuka mu byuma bikoresha ingufu nke ni uburyo busanzwe bwo gushyira umwuka mu byuma bikoresha ingufu nke nta gitutu gikabije. Itandukaniro rikomeye riri hagati ya LPCVD n'ubundi buryo bwa CVD ni ubushyuhe bwo gushyiramo umwuka mu byuma. LPCVD ikoresha ubushyuhe bwinshi cyane mu gushyiramo filime, ubusanzwe zirenga 600°C.

Ahantu hafite umuvuduko muke hatuma habaho firime imwe ifite isuku nyinshi, ubushobozi bwo kongera gukora, no guhuza. Ibi bikorwa hagati ya 10 na 1.000 Pa, mu gihe umuvuduko usanzwe w'icyumba ari 101.325 Pa. Ubushyuhe bugena ubunini n'ubuziranenge bw'izi firime, ubushyuhe bwinshi bugatuma habaho firime nini kandi nziza.

• Filime zisanzwe zashyizwemo:polysilicon, okiside zavanzwe n'izidafite aho zibohowe,nitride.

PECVD

Uburyo bwo gupima umwuka wa plasma bukoresha ubushyuhe buke kandi bufite ubucucike bwinshi. PECVD ibera muri reactor ya CVD hongewemo plasma, ari yo gaze ifite ion igice ifite electron nyinshi (~50%). Ubu buryo bwo gupima ubushyuhe buke buba hagati ya 100°C na 400°C. PECVD ishobora gukorwa ku bushyuhe buke kuko ingufu ziva muri electron zigenga zitandukanya gaze zikora filime ku buso bwa wafer.

Ubu buryo bwo gushyiramo plasma bukoresha ubwoko bubiri butandukanye:

1. Ubukonje (butari ubushyuhe): Electron zifite ubushyuhe buri hejuru ugereranyije n'uduce duto na iyoni. Ubu buryo bukoresha ingufu za electron mu guhindura umuvuduko mu cyumba cyo gushyiramo.
2. Ubushyuhe: electron zifite ubushyuhe bumwe n'uduce duto na iyoni mu cyumba cyo gushyiramo ibintu.

Mu cyumba cyo gushyiramo umwuka, voltage ya radio-frequency yoherezwa hagati ya electrodes ziri hejuru na munsi ya wafer. Ibi bishyuza electrons kandi bikayigumana mu buryo bworoshye kugira ngo ishyiremo filime ikenewe.

Hari intambwe enye zo guteza imbere filime binyuze muri PECVD:

1. Shyira agace k'isukari ku gikoresho cy'amashanyarazi kiri imbere mu cyumba cyo gushyiramo.
2. Shyira imyuka ikora n'ibintu biyishyira mu cyumba.
3. Ohereza plasma hagati ya electrodes hanyuma ushyireho voltage kugira ngo plasma itere imbere.
4. Imyuka ikora ihinduka ikavamo igakorana n'ubuso bw'imvange kugira ngo ikore agahu gato, ibikomoka kuri iyo myuka bisohoka mu cyumba.

• Filimi zisanzwe zishyirwamo: okiside za silikoni, nitride ya silikoni, silikoni idafite isura,oksinetiride za silikoni (Si_xO_yN_z).

APCVD

Gushyira umwuka mu kirere mu buryo bw'ubushyuhe buke bukorerwa mu itanura ku gitutu gisanzwe cy'ikirere. Kimwe n'ubundi buryo bwa CVD, APCVD ikenera umwuka ubanza imbere mu cyumba cyo gushyiramo umwuka, hanyuma ubushyuhe buzamuka buhoro buhoro kugira ngo butume habaho ingaruka ku buso bwa wafer no gushyiramo agahu gato. Bitewe n'ubwo buryo bworoshye, bufite igipimo cyo gushyiramo umwuka kiri hejuru cyane.

• Filimi zisanzwe zishyirwamo: okiside za silikoni zadopye n'izidafite aho zibohowe, nitride za silikoni. Nanone zikoreshwa murigufunga.

HDP CVD

Gushyira umwuka mu maraso mu buryo bwa "high density plasma chemical vapor deposition" ni verisiyo ya PECVD ikoresha plasma ifite ubucucike bwinshi, bigatuma wafers zigira ingaruka ku bushyuhe buri hasi cyane (hagati ya 80°C-150°C) mu cyumba cyo gushyiramo umwuka. Ibi kandi binakora filime ifite ubushobozi bwo kuzuza imyobo.

• Filimi zisanzwe zishyirwamo: silicon dioxide (SiO2)₂), nitride ya silikoni (Si₃N₄),karubide ya silikoni (SiC).

SACVD

Gushyira umwuka mu kirere mu kirere bitandukanye n'ubundi buryo kuko biba munsi y'umuvuduko usanzwe wo mu cyumba kandi bigakoresha ozone (O2).₃) kugira ngo bifashe mu gukurura ingaruka. Uburyo bwo gushyiramo ibintu buba ku muvuduko uri hejuru ugereranije na LPCVD ariko buri munsi ya APCVD, hagati ya Pa 13.300 na Pa 80.000. Filimi za SACVD zifite igipimo cyo gushyiramo ibintu kinini kandi birushaho kwiyongera uko ubushyuhe bwiyongera kugeza kuri dogere selisiyusi 490, aho bitangira kugabanuka.

• Filime zisanzwe zashyizwemo:BPSG, PSG,TEOS.

Shandong Zhongpeng Special Ceramics Co., Ltd ni imwe mu mashami manini ya silicon carbide ceramic mu Bushinwa. SiC technical ceramic: Ubukana bwa Moh ni 9 (Ubukana bwa Moh bushya ni 13), bufite ubudahangarwa bwiza bwo kwangirika no kwangirika, ubukana bwiza bwo kwangirika no kurwanya oxidation. Igihe cy'akazi k'ibicuruzwa bya SiC ni inshuro 4 kugeza kuri 5 ugereranyije n'ibikoresho bya alumina 92%. MOR ya RBSiC ikubye inshuro 5 kugeza kuri 7 ugereranyije na SNBSC, ishobora gukoreshwa mu miterere igoye cyane. Uburyo bwo gutanga ibiciro ni bwihuse, gutanga ibintu ni uko byasezeranijwe kandi ubwiza ni ubwa mbere. Buri gihe dukomeza guhangana n'intego zacu kandi tugasubiza imitima yacu kuri sosiyete.