SiC substrate ya CVD film covering

Chitsulo cha SiC cha chophimba cha filimu ya CVD Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Kutulutsa nthunzi ya mankhwala Kutulutsa nthunzi ya mankhwala (CVD) oxide ndi njira yokulira yolunjika pomwe mpweya woyambirira umayika filimu yopyapyala pa wafer mu reactor. Njira yokulira ndi yotentha kwambiri ndipo imakhala ndi chiwopsezo chachikulu cha kukula poyerekeza ndi kutentha kwa oxide. Imapanganso zigawo zopyapyala kwambiri za silicon dioxide chifukwa filimuyo imachotsedwa, m'malo mokula. Njirayi imapanga filimu yokhala ndi mphamvu zamagetsi zambiri, yomwe ndi yabwino kugwiritsidwa ntchito mu zida za IC ndi MEMS, pakati pa zina zambiri...

Doko:Weifang kapena Qingdao

Kuuma kwatsopano kwa Mohs: 13

Zipangizo zazikulu zopangira:Silicon Carbide

Tumizani imelo kwa ife Tsitsani ngati PDF

Tsatanetsatane wa Zamalonda

ZPC - wopanga ceramic wa silicon carbide

Ma tag a Zamalonda

Kutaya Nthunzi ya Mankhwala

Chemical vapor deposition (CVD) oxide ndi njira yokulira yolunjika pomwe mpweya woyambirira umayika filimu yopyapyala pa wafer mu reactor. Njira yokulira imakhala yotentha kwambiri ndipo imakhala ndi chiwopsezo chachikulu chokulira poyerekeza ndiokusayidi wotenthaImapanganso zigawo zoonda kwambiri za silicon dioxide chifukwa filimuyo imachotsedwa, m'malo mokulira. Njirayi imapanga filimu yokhala ndi mphamvu zamagetsi zambiri, yomwe ndi yabwino kugwiritsidwa ntchito mu zida za IC ndi MEMS, pakati pa ntchito zina zambiri.

Chemical vapor deposition (CVD) oxide imachitika pamene gawo lakunja likufunika koma gawo la silicon silingathe kusungunuka.

Kukula kwa Kutaya Nthunzi ya Mankhwala:

Kukula kwa CVD kumachitika pamene mpweya kapena nthunzi (precursor) zimalowetsedwa mu reactor yotsika kutentha komwe ma wafer amayikidwa molunjika kapena molunjika. Mpweyawo umadutsa mu dongosololi ndikufalikira mofanana pamwamba pa ma wafer. Pamene ma wafer awa akuyenda kudzera mu reactor, ma wafer amayamba kuwayamwa pamwamba pawo.

Zinthu zoyambira zikangofalikira mofanana mu dongosolo lonse, zochita za mankhwala zimayamba pamwamba pa zinthuzo. Zochita za mankhwalazi zimayamba ngati zilumba, ndipo pamene njirayi ikupitirira, zilumbazo zimakula ndikuphatikizana kuti zipange filimu yomwe mukufuna. Zochita za mankhwala zimapanga zinthu ziwiri pamwamba pa ma wafer, zomwe zimafalikira kudutsa malire ndikutuluka mu reactor, ndikusiya ma wafer okha ndi utoto wawo wa filimu.

Chithunzi 1

(1.) Mpweya/Nthunzi imayamba kuchitapo kanthu ndikupanga zilumba pamwamba pa nthaka. (2.) Zilumba zimakula ndikuyamba kusakanikirana. (3.) Filimu yopitilira, yofanana imapangidwa.

Ubwino wa Kutaya Nthunzi ya Mankhwala:

Njira yokulira kutentha kochepa.
Kuchuluka kwa mafuta ofunikira mwachangu (makamaka APCVD).
Sikoyenera kukhala gawo la silicon.
Kuphimba bwino masitepe (makamaka PECVD).

Chithunzi 2
Kuchuluka kwa silicon dioxide poyerekeza ndi kukula

Kuti mudziwe zambiri zokhudza kuyika nthunzi ya mankhwala kapena kupempha mtengo, chondeLumikizanani ndi SVMlero kuti tilankhule ndi membala wa gulu lathu logulitsa.

Mitundu ya matenda a mtima (CVD)

LPCVD

Kuyika nthunzi ya mankhwala ochepetsa mphamvu ya mankhwala ndi njira yokhazikika yoyika nthunzi ya mankhwala popanda kupanikizika. Kusiyana kwakukulu pakati pa LPCVD ndi njira zina za CVD ndi kutentha kwa malo oika. LPCVD imagwiritsa ntchito kutentha kwakukulu kwambiri kuti ipange mafilimu, nthawi zambiri pamwamba pa 600°C.

Malo otsika mphamvu amapanga filimu yofanana kwambiri yokhala ndi chiyero chapamwamba, kubwerezabwereza, komanso kufanana. Izi zimachitika pakati pa 10 - 1,000 Pa, pomwe kupanikizika kwa chipinda ndi 101,325 Pa. Kutentha kumatsimikiza makulidwe ndi chiyero cha mafilimu awa, ndipo kutentha kwakukulu kumabweretsa mafilimu okhuthala komanso oyera.

Mafilimu odziwika bwino omwe adayikidwa:polysilicon, ma oxide opangidwa ndi doped & undoped,nitrides.

PECVD

Kuika nthunzi ya mankhwala owonjezera plasma ndi njira yoikamo nthunzi ya plasma yotsika kutentha komanso yochuluka kwambiri. PECVD imachitika mu CVD reactor powonjezera plasma, yomwe ndi mpweya wopangidwa pang'ono wokhala ndi ma electron ambiri (~50%). Iyi ndi njira yoikamo nthunzi ya 100°C - 400°C. PECVD ikhoza kuchitika kutentha kochepa chifukwa mphamvu yochokera ku ma electron aulere imalekanitsa mpweya wochitapo kanthu kuti ipange filimu pamwamba pa wafer.

Njira yodziwira izi imagwiritsa ntchito mitundu iwiri yosiyanasiyana ya plasma:

Ozizira (osatentha): ma elekitironi ali ndi kutentha kwakukulu kuposa tinthu tating'onoting'ono ndi ma ayoni. Njira iyi imagwiritsa ntchito mphamvu ya ma elekitironi posintha kuthamanga kwa mpweya mu chipinda chosungiramo mpweya.
Kutentha: ma elekitironi ali ndi kutentha komweko monga tinthu tating'onoting'ono ndi ma ayoni omwe ali mu chipinda chosungiramo zinthu.

Mkati mwa chipinda chosungiramo zinthu, magetsi a wailesi amatumizidwa pakati pa ma electrode pamwamba ndi pansi pa wafer. Izi zimayatsa ma electron ndikuwasunga mumkhalidwe wosangalatsa kuti asunge filimu yomwe mukufuna.

Pali njira zinayi zokulira mafilimu kudzera mu PECVD:

Ikani chofufutira cha target pa electrode mkati mwa chipinda chosungiramo zinthu.
Ikani mpweya woipa ndi zinthu zosungira mpweya m'chipindamo.
Tumizani plasma pakati pa ma electrode ndikugwiritsa ntchito magetsi kuti musangalatse plasma.
Mpweya wochitapo kanthu umalekanitsidwa ndi kuyanjana ndi pamwamba pa wafer kuti upange filimu yopyapyala, ndipo zinthu zina zimatuluka m'chipindamo.

Mafilimu odziwika bwino omwe amaikidwa: silicon oxides, silicon nitride, silicon amorphous,ma silicon oxynitrides (Si_xO_yN_z).

APCVD

Kuyika nthunzi ya mankhwala mumlengalenga ndi njira yoyika kutentha kochepa yomwe imachitika mu ng'anjo pa kuthamanga kwa mpweya koyenera. Monga njira zina za CVD, APCVD imafuna mpweya woyambira mkati mwa chipinda choyikamo, kenako kutentha kumakwera pang'onopang'ono kuti kulimbikitse zomwe zimachitika pamwamba pa wafer ndikuyika filimu yopyapyala. Chifukwa cha kuphweka kwa njira iyi, ili ndi kuchuluka kwakukulu kwa kuyikamo.

Mafilimu odziwika bwino omwe amaikidwa: ma silicon oxides opangidwa ndi doped ndi undoped, silicon nitrides. Amagwiritsidwanso ntchito mukuphimba.

HDP CVD

Kuyika kwa nthunzi ya plasma yochuluka kwambiri ndi mtundu wa PECVD womwe umagwiritsa ntchito plasma yochuluka kwambiri, zomwe zimathandiza kuti ma wafer achitepo kanthu ndi kutentha kochepa kwambiri (pakati pa 80°C-150°C) mkati mwa chipinda choyikamo. Izi zimapanganso filimu yokhala ndi mphamvu zambiri zodzaza ngalande.

Mafilimu odziwika bwino omwe amaikidwa: silicon dioxide (SiO2)₂), silicon nitride (Si₃N₄),silicon carbide (SiC).

SACVD

Kuyika nthunzi ya mankhwala opanikizika pansi pa mpweya kumasiyana ndi njira zina chifukwa kumachitika pansi pa mphamvu ya chipinda ndipo kumagwiritsa ntchito ozone (O2).₃) kuti zithandize kuyambitsa zomwe zimachitika. Njira yoyika zinthu imachitika pa mphamvu yokwera kuposa LPCVD koma yotsika kuposa APCVD, pakati pa 13,300 Pa ndi 80,000 Pa. Mafilimu a SACVD ali ndi mphamvu yoyika zinthu zambiri ndipo izi zimakula pamene kutentha kumakwera mpaka pafupifupi 490°C, pomwe amayamba kuchepa.

Mafilimu odziwika bwino omwe adayikidwa:BPSG, PSG,TEOS.

Yapitayi: Chitoliro chachitsulo chokongoletsedwa ndi ceramic cha SiC

Ena: Mapiringidzo a SiC Ceramic okhala ndi chigongono

Shandong Zhongpeng Special Ceramics Co., Ltd ndi imodzi mwa njira zazikulu kwambiri zothetsera zinthu zatsopano za silicon carbide ceramic ku China. SiC technical ceramic: Kuuma kwa Moh ndi 9 (Kuuma kwa New Moh ndi 13), komwe kumalimbana bwino ndi kukokoloka ndi dzimbiri, kukana bwino kwambiri - kukana komanso kukana okosijeni. Moyo wa ntchito wa SiC ndi wautali nthawi 4 mpaka 5 kuposa 92% alumina. MOR ya RBSiC ndi nthawi 5 mpaka 7 kuposa ya SNBSC, ingagwiritsidwe ntchito pazinthu zovuta kwambiri. Njira yowerengera mawu ndi yachangu, kutumiza kumakhala monga momwe kunalonjezera ndipo khalidwe lake ndi lapamwamba kwambiri. Nthawi zonse timapitilizabe kutsutsa zolinga zathu ndikubwezera mitima yathu kwa anthu.