I-substrate ye-SiC yokugqoka ifilimu ye-CVD

Ukususwa Komusi Wekhemikhali

I-Chemical vapor deposition (CVD) oxide inqubo yokukhula eqondile lapho igesi engaphambili ifaka khona ifilimu encane ku-wafer ku-reactor. Inqubo yokukhula iphansi kakhulu futhi inesilinganiso sokukhula esiphezulu kakhulu uma iqhathaniswa ne-i-thermal oxideIphinde ikhiqize izingqimba ezincane kakhulu ze-silicon dioxide ngoba ifilimu iyasuswa esikhundleni, kunokuba ikhuliswe. Le nqubo ikhiqiza ifilimu enokumelana okuphezulu kukagesi, okuhle kakhulu ukusetshenziswa kuma-IC namadivayisi e-MEMS, phakathi kwezinye izinhlelo zokusebenza eziningi.

I-Chemical vapor deposition (CVD) oxide yenziwa lapho kudingeka ungqimba lwangaphandle kodwa i-silicon substrate ingase ingakwazi uku-oxidized.

Ukukhula Kokudonswa Komusi Wekhemikhali:

Ukukhula kwe-CVD kwenzeka lapho igesi noma umhwamuko (isibikezelo) kungeniswa ku-reactor yokushisa okuphansi lapho ama-wafer ahlelwe khona ngokuqondile noma ngokuvundlile. Igesi ihamba ohlelweni futhi isabalale ngokulinganayo ebusweni bama-wafer. Njengoba la ma-precursor ehamba ku-reactor, ama-wafer aqala ukuwamunca ebusweni bawo.

Uma izinto ezandulelayo sezisakazeke ngokulinganayo kulo lonke uhlelo, ukusabela kwamakhemikhali kuqala ebusweni bezinto ezingaphansi komhlaba. Lokhu kusabela kwamakhemikhali kuqala njengeziqhingi, futhi njengoba inqubo iqhubeka, iziqhingi ziyakhula futhi zihlangane ukuze zenze ifilimu oyifunayo. Ukusabela kwamakhemikhali kudala imikhiqizo emibili ebusweni bezinto ezingaphansi komhlaba, ezisakazeka ngaphesheya kwengqimba yomngcele futhi zigeleze ziphume ku-reactor, zishiye ama-wafer kuphela ane-coating yefilimu egciniwe.

Umfanekiso 1

Izinzuzo Zokuthululwa Komusi Wekhemikhali:

• Inqubo yokukhula kwezinga lokushisa eliphansi.
• Izinga lokufakwa okusheshayo (ikakhulukazi i-APCVD).
• Akudingeki kube yi-substrate ye-silicon.
• Ukumbozwa okuhle kwezinyathelo (ikakhulukazi i-PECVD).

Umfanekiso 2
Ukufakwa kwe-silicon dioxide uma kuqhathaniswa nokukhula

Ukuze uthole ulwazi olwengeziwe mayelana nokufakwa komphunga wamakhemikhali noma ukucela ikhotheshini, sicelaXHUMANA NE-SVMnamuhla ukukhuluma nelungu lethimba lethu lokuthengisa.

Izinhlobo ze-CVD

I-LPCVD

Ukufakwa komusi wamakhemikhali ocindezelwe kancane kuyinqubo ejwayelekile yokufakwa komusi wamakhemikhali ngaphandle kokucindezela. Umehluko omkhulu phakathi kwe-LPCVD nezinye izindlela ze-CVD izinga lokushisa lokufakwa. I-LPCVD isebenzisa izinga lokushisa eliphakeme kakhulu ukufaka amafilimu, ngokuvamile angaphezu kuka-600°C.

Indawo enomfutho ophansi idala ifilimu efanayo kakhulu enokuhlanzeka okuphezulu, ukuphindaphindeka, kanye nokulingana. Lokhu kwenziwa phakathi kuka-10 - 1,000 Pa, kuyilapho umfutho ojwayelekile wegumbi ungama-101,325 Pa. Izinga lokushisa linquma ukujiya kanye nobumsulwa bala mafilimu, kanti amazinga okushisa aphezulu aholela kumafilimu amakhulu futhi amsulwa kakhulu.

• Amafilimu avamile afakiwe:i-polysilicon, ama-oxide axutshwe futhi angavulwanga,ama-nitride.

I-PECVD

Ukufakwa komoya wamakhemikhali othuthukisiwe nge-plasma kuyindlela yokubeka umswakama ophansi, ogcwele ifilimu. I-PECVD yenzeka ku-reactor ye-CVD ngokufakwa kwe-plasma, okuyigesi e-ionized ngokwengxenye enokuqukethwe okuphezulu kwama-electron mahhala (~50%). Lena indlela yokufaka umswakama ophansi eyenzeka phakathi kuka-100°C - 400°C. I-PECVD ingenziwa emazingeni okushisa aphansi ngoba amandla avela kuma-electron mahhala ahlukanisa amagesi asebenzayo ukuze akhe ifilimu ebusweni be-wafer.

Le ndlela yokufaka isebenzisa izinhlobo ezimbili ezahlukene ze-plasma:

1. Ama-electron abandayo (angenawo ukufudumala): ama-electron anokushisa okuphezulu kunezinhlayiya ezingathathi hlangothi nama-ion. Le ndlela isebenzisa amandla ama-electron ngokushintsha ingcindezi ekamelweni lokubeka.
2. Ukushisa: ama-electron anezinga lokushisa elifanayo nezinhlayiya nama-ion ekamelweni lokubeka.

Ngaphakathi kwegumbi lokubeka, i-voltage ye-radio-frequency ithunyelwa phakathi kwama-electrode ngaphezulu nangaphansi kwe-wafer. Lokhu kushaja ama-electron futhi kuwagcine esesimweni sokujabula ukuze afake ifilimu oyifunayo.

Kunezinyathelo ezine zokukhulisa amafilimu nge-PECVD:

1. Beka i-target wafer ku-electrode ngaphakathi kwegumbi lokufaka.
2. Faka amagesi asabelayo kanye nezinto zokubeka izinto ekamelweni.
3. Thumela i-plasma phakathi kwama-electrode bese usebenzisa i-voltage ukuze uvuse i-plasma.
4. Igesi esabelayo iyahlukana futhi isabela ebusweni be-wafer ukuze yakhe ifilimu encane, imikhiqizo ephumayo iyasakazeka iphume ekamelweni.

• Amafilimu avamile afakiwe: ama-silicon oxide, i-silicon nitride, i-silicon engapheli,ama-silicon oxynitrides (Si_xO_yN_z).

I-APCVD

Ukufakwa komphunga wamakhemikhali okucindezela umoya kuyindlela yokufakwa kokushisa okuphansi eyenzeka esithandweni somlilo ngengcindezi evamile yomoya. Njengezinye izindlela ze-CVD, i-APCVD idinga igesi yokuqala ngaphakathi kwegumbi lokufakwa, bese izinga lokushisa likhuphuka kancane kancane ukuze lishukumise ukusabela ebusweni be-wafer futhi lifake ifilimu encane. Ngenxa yobulula bale ndlela, inezinga eliphezulu kakhulu lokufakwa.

• Amafilimu avamile afakwa: ama-silicon oxide afakwe idophi futhi angafakwanga, ama-silicon nitrides. Asetshenziswa futhi kuukubopha.

I-HDP CVD

Ukufakwa kwe-high density plasma chemical vapor deposition kuyinguqulo ye-PECVD esebenzisa i-high density plasma, okuvumela ama-wafers ukuthi asabele ngokushisa okuphansi kakhulu (phakathi kuka-80°C-150°C) ngaphakathi kwegumbi lokufakwa. Lokhu kudala nefilimu enamakhono amakhulu okugcwalisa imisele.

• Amafilimu avamile afakiwe: i-silicon dioxide (i-SiO2)₂), i-silicon nitride (Si₃N₄),i-silicon carbide (i-SiC).

I-SACVD

Ukufakwa komphunga wamakhemikhali okucindezela i-subatmospheric kuhlukile kwezinye izindlela ngoba kwenzeka ngaphansi kwengcindezi ejwayelekile yegumbi futhi kusebenzisa i-ozone (O2).₃) ukusiza ekuvuseleleni ukusabela. Inqubo yokufaka yenzeka ngengcindezi ephezulu kune-LPCVD kodwa iphansi kune-APCVD, phakathi kwama-Pa angaba ngu-13,300 nama-Pa angu-80,000. Amafilimu e-SACVD anezinga eliphezulu lokufaka futhi elithuthuka njengoba izinga lokushisa likhuphuka kuze kube ngu-490°C, lapho liqala khona ukwehla.

• Amafilimu avamile afakiwe:I-BPSG, i-PSG,I-TEOS.

I-Shandong Zhongpeng Special Ceramics Co., Ltd ingenye yezixazululo ezinkulu zezinto ezintsha ze-silicon carbide ceramic eShayina. I-SiC technical ceramic: Ubulukhuni bukaMoh buyi-9 (ubulukhuni bukaMoh obuyi-13), bunokumelana okuhle kakhulu nokuguguleka nokugqwala, ukumelana okuhle kakhulu - ukumelana nokugqwala kanye nokulwa nokubola. Impilo yesevisi yomkhiqizo we-SiC ide ngokuphindwe ka-4 kuya ku-5 kune-92% ye-alumina material. I-MOR ye-RBSiC iphindwe ka-5 kuya ku-7 kune-SNBSC, ingasetshenziswa ezimweni eziyinkimbinkimbi kakhulu. Inqubo yokucaphuna iyashesha, ukulethwa kunjengoba kuthenjisiwe futhi ikhwalithi ayilingani. Sihlala siphikelela ekuphonseni inselelo imigomo yethu futhi sibuyisela izinhliziyo zethu emphakathini.