ubuchwepheshe

  1. UBUHLE wokusabela eziboshiwe Silicon Carbide

Ukusabela eziboshiwe Silicon Carbide (RBSC, noma SiSiC) imikhiqizo zinikeza kakhulu ubulukhuni / nemihuzuko ukumelana naso futhi kwenze oluvelele chemical ukuzinza ezindaweni nolaka. Silicon Carbide sisetshenziselwa izinto zokwenziwa ukuthi liveza ukusebenza izici okusezingeni eliphezulu kuhlanganise:

Excellent chemical ukumelana.

Amandla RBSC cishe 50% obukhulu kunobukaJohane kakhulu nitride eziboshiwe Silicon carbides. RBSC iyona kakhulu ukugqwala ukumelana naso futhi kwenze antioxidation Ceramic .. zingase zimiswe It ku ezihlukahlukene desulpurization umlomo wombhobho (FGD).

bafake kungemalengiso umthelela ukumelana .

Kuyinto esivelele enkulu isikali nemihuzuko ukumelana ubuchwepheshe sobumba. RBSiC babe ubulukhuni okusezingeni eliphezulu esondela ukuthi diamond. Yenzelwe ukusetshenziswa izicelo nomumo omkhulu lapho amamaki refractory ka-silicon Carbide kuthiwa bembonisa bafake olwalwenza noma umonakalo kusuka umthelela izinhlayiya ezinkulu. Amelana impingement oqondile yokukhanya izinhlayiya kanye nomthelela ngokuhambisa nemihuzuko kwezinto eziqinile esindayo equkethe slurries. Singasho benziwa ezihlukahlukene bobunjwa, kuhlanganise Isigaxa futhi emikhonweni bobunjwa, kanye izingcezu eziyinkimbinkimbi izakhi eyenzelwe imishini ehilelekile ukucutshungulwa izinto zokusetshenziswa.

Excellent ukushaqeka ezishisayo ukumelana.

Ukusabela eziboshiwe Silicon izingxenye Carbide ukunikeza oluvelele ezishisayo ukushaqeka enqabe kodwa ngokungafani zobumba bendabuko, nabo sihlanganise ukuminyana ongaphakeme nge high amandla lokukhanda.

amandla High (uzuza amandla ashisa).

Ukusabela eziboshiwe Silicon Carbide azigcina kakhulu ngamandla alo mechanical at okushisa ephakeme nemibukiso amazinga aphansi kakhulu ungangena, okwenza kube choice lokuqala for izicelo umthwalo esindayo kule 1300ºC ububanzi 1650ºC (2400ºC ukuze 3000ºF).

  1. Technical Data-ishidi

Technical ishidi

iyunithi

SiSiC (RBSiC)

NbSiC

ReSiC

Sintered sic

Ukusabela eziboshiwe Silicon Carbide

Nitride eziboshiwe Silicon Carbide

Recrystallized Silicon Carbide

Sintered Silicon Carbide

inhlanganiso kwenqwaba

(g.cm 3)

≧ 3,02

2.75-2.85

2,65 ~ 2.75

2.8

sic

(%)

83,66

≧ 75

≧ 99

90

Si3N4

(%)

0

≧ 23

0

0

Si

(%)

15,65

0

0

9

Vula Porosity

(%)

<0.5

10 ~ 12

15-18

7 ~ 8

ukugoba amandla

MPA / 20 ℃

250

160 ~ 180

80-100

500

MPA / 1200 ℃

280

170 ~ 180

90-110

550

Modulus okunwebeka

GPA / 20 ℃

330

580

300

200

GPA / 1200 ℃

300

~

~

~

conductivity ezishisayo

W / (m * k)

45 (1200 ℃)

19.6 (1200 ℃)

36.6 (1200 ℃)

13.5 ~ 14.5 (1000 ℃)

Confficient sokwanda ezishisayo

K 1 * 10 ˉ6

4.5

4.7

4,69

3

Mons 'ubulukhuni isikali (Isandla esiqine ngokweqile)

 

9.5

~

~

~

Max-ukusebenza temparature

1380

1450

1620 (oxid)

1300

  1. Umkhakha Case  Ukuze Reaction eziboshiwe Silicon Carbide:

Amandla Generation, imayini, Chemical, Petrochemical, kahhonela, Imishini embonini, Minerals & Metallurgy nokunye.

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Nokho, ngokungafani izinsimbi kanye Alloys zabo, azikho zifane umkhakha ukusebenza sokunquma Silicon Carbide. With ezahlukene ezaqanjwa, ukuminyana kwabantu, amasu yokukhiqiza kanye nenkampani nakho, i-silicon izingxenye Carbide angahluka kakhulu e ukungaguquguquki, kanye izakhiwo mechanical futhi amakhemikhali. Ukukhetha kwakho umphakeli inquma lizinga kanye izinga material uthola.


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