I-Teminology Evame Ukuhlanganiswa Nokucutshungulwa Kwe-Silicon Carbide

I-Silicon Carbide Ephinde Yasetshenziswa (RXSIC, ReSIC, RSIC, R-SIC). Izinto zokuqala zokusetshenziswa yi-silicon carbide. Azikho izinsiza zokuqinisa ezisetshenziswayo. Ama-compact aluhlaza ashiswa abe ngaphezu kuka-2200ºC ukuze kuhlanganiswe okokugcina. Izinto ezivelayo zine-porosity engaba ngu-25%, okunciphisa izakhiwo zayo zomshini; noma kunjalo, izinto zingaba msulwa kakhulu. Inqubo iyonga kakhulu.
I-Reaction Bonded Silicon Carbide (RBSIC). Izinto zokuqala zokusetshenziswa yi-silicon carbide kanye ne-carbon. Ingxenye eluhlaza bese ifakwa nge-silicon encibilikisiwe ngaphezu kuka-1450ºC ngempendulo: I-SiC + C + Si -> SiC. Isakhiwo esincane ngokuvamile sine-silicon eyengeziwe, ekhawulela izakhiwo zayo zokushisa okuphezulu kanye nokumelana nokugqwala. Ushintsho oluncane lwesilinganiso luyenzeka phakathi nenqubo; noma kunjalo, ungqimba lwe-silicon luvame ukuba khona ebusweni bengxenye yokugcina. I-ZPC RBSiC zamukelwa ubuchwepheshe obuthuthukisiwe, okukhiqiza ulwelwesi lokumelana nokugqwala, amapuleti, amathayili, ulwelwesi lwesishingishane, amabhlogo, izingxenye ezingajwayelekile, kanye nama-nozzle e-FGD okumelana nokugqwala, i-heat exchanger, amapayipi, amashubhu, njalo njalo.

I-Nitride Bonded Silicon Carbide (NBSIC, NSIC). Izinto zokuqala zokusetshenziswa yi-silicon carbide kanye ne-silicon powder. I-compact eluhlaza ishiswa emoyeni we-nitrogen lapho kwenzeka khona ukusabela kwe-SiC + 3Si + 2N2 -> SiC + Si3N4. Izinto zokugcina zibonisa ushintsho oluncane ngesikhathi sokucubungula. Izinto zibonisa izinga elithile le-porosity (ngokuvamile cishe ama-20%).

I-Direct Sintered Silicon Carbide (SSIC). I-Silicon carbide iyinto yokuqala eluhlaza. Izinsiza zokuqinisa i-boron kanye ne-carbon, futhi ukuqina kwenzeka ngenqubo yokusabela kwesimo esiqinile ngaphezu kuka-2200ºC. Izakhiwo zayo zokushisa okuphezulu kanye nokumelana nokugqwala kuphakeme ngenxa yokuntuleka kwesigaba sesibili esinjengengilazi emingceleni yokusanhlamvu.

I-Liquid Phase Sintered Silicon Carbide (LSSIC). I-Silicon carbide iyinto yokuqala eluhlaza. Izinsiza zokuqinisa yi-yttrium oxide kanye ne-aluminium oxide. Ukuqina kwenzeka ngaphezu kuka-2100ºC ngokusabela kwesigaba soketshezi futhi kuphumela esigabeni sesibili esinjengengilazi. Izakhiwo zemishini ngokuvamile zingcono kune-SSIC, kodwa izakhiwo zokushisa okuphezulu kanye nokumelana nokugqwala azilungile kangako.

I-Hot Pressed Silicon Carbide (HPSIC). Impuphu ye-silicon carbide isetshenziswa njengezinto zokuqala. Izinsiza zokuqinisa ngokuvamile ziyi-boron kanye ne-carbon noma i-yttrium oxide kanye ne-aluminium oxide. Ukuqina kwenzeka ngokusetshenziswa kwengcindezi yomshini kanye nokushisa ngaphakathi kwe-graphite die cavity. Izimo ziyizingcwecwe ezilula. Inani eliphansi lezinsiza zokuhlanza lingasetshenziswa. Izakhiwo zomshini zezinto ezicindezelwe ezishisayo zisetshenziswa njengesisekelo lapho ezinye izinqubo ziqhathaniswa khona. Izakhiwo zikagesi zingashintshwa ngokushintsha kwezinsiza zokuqinisa.

I-CVD Silicon Carbide (i-CVDSIC). Le nto yakhiwe yinqubo yokufakwa komphunga wamakhemikhali (i-CVD) ehilela ukusabela: CH3SiCl3 -> SiC + 3HCl. Ukusabela kwenziwa ngaphansi kwesimo sezulu se-H2 lapho i-SiC ifakwa ku-substrate ye-graphite. Le nqubo iphumela ezintweni ezihlanzekile kakhulu; nokho, amapuleti alula kuphela angenziwa. Le nqubo ibiza kakhulu ngenxa yezikhathi zokusabela ezisheshayo.

I-Chemical Vapor Composite Silicon Carbide (CVCSiC). Le nqubo iqala nge-graphite precursor eqondene nayo efakwa ezimeni eziseduze ne-net esimweni se-graphite. Inqubo yokuguqula ibeka ingxenye ye-graphite ekusabeleni kwe-in situ vapor solid-state ukuze ikhiqize i-polycrystalline, i-stoichiometrically correct SiC. Le nqubo elawulwa ngokuqinile ivumela imiklamo eyinkimbinkimbi ukuthi ikhiqizwe engxenyeni ye-SiC eguqulwe ngokuphelele enezici zokubekezelelana okuqinile kanye nobumsulwa obuphezulu. Inqubo yokuguqula ifinyeza isikhathi sokukhiqiza esijwayelekile futhi inciphisa izindleko kunezinye izindlela.* Umthombo (ngaphandle kwalapho kuphawuliwe khona): Ceradyne Inc., Costa Mesa, Calif.