Silicon Carbide yakagayiwazve (RXSIC, ReSIC, RSIC, R-SIC). Chinhu chekutanga isilicon carbide. Hapana zvinhu zvinobatsira pakusimba kwesimbi zvinoshandiswa. Matinji egirini anopiswa kusvika pamusoro pe2200ºC kuti asimbiswe. Chinhu chinobuda chine 25% porosity, izvo zvinoderedza hunhu hwayo hwemakanika; zvisinei, chinhu chacho chinogona kuva chakachena kwazvo. Maitiro acho anodhura zvishoma.
Reaction Bonded Silicon Carbide (RBSIC). Zvinhu zvekutanga isilicon carbide pamwe nekabhoni. Chikamu chegirini chinozopinzwa nesilicon yakanyungudutswa pamusoro pe1450ºC nekuita: SiC + C + Si -> SiC. Chimiro che microstructure chinowanzova nesilicon yakawandisa, izvo zvinoderedza hunhu hwayo hwekupisa kwakanyanya uye kuramba ngura. Kuchinja kudiki kunoitika panguva yekuita; zvisinei, jira resilicon rinowanzo kuvepo pamusoro pechikamu chekupedzisira. ZPC RBSiC dzinoshandiswa tekinoroji yepamusoro, dzichigadzira wear resistance lining, maplate, mataira, cyclone lining, mablock, zvikamu zvisina kurongeka, uye wear & corrosion resistance FGD nozzles, heat exchanger, mapaipi, machubhu, nezvimwewo.
Nitride Bonded Silicon Carbide (NBSIC, NSIC). Zvinhu zvekutanga isilicon carbide pamwe nesilicon powder. Green compact inopiswa mumhepo ine nitrogen apo reaction SiC + 3Si + 2N2 -> SiC + Si3N4 inoitika. Chinhu chekupedzisira hachina kuchinja kukuru panguva yekugadzirisa. Chinhu chacho chinoratidza mwero we porosity (kazhinji inenge 20%).
Direct Sintered Silicon Carbide (SSIC). Silicon carbide ndiyo yekutanga. Zvinobatsira pakusimba kwesimba iboron pamwe nekabhoni, uye densification inoitika nemaitiro ekuita solid-state ari pamusoro pe2200ºC. Hunhu hwayo hwekupisa kwakanyanya uye kuramba kwayo ngura zvakanaka nekuda kwekushaikwa kwechikamu chechipiri chakaita segirazi pamiganhu yegorosi.
Liquid Phase Sintered Silicon Carbide (LSSIC). Silicon carbide ndiyo yekutanga. Zvinobatsira pakusimba kwesimba iyttrium oxide pamwe nealuminium oxide. Kusimba kwesimba kunoitika pamusoro pe2100ºC nekuita kwechikamu chemvura uye kunoguma nechikamu chechipiri chakaita segirazi. Hunhu hwemuchina hunowanzo pfuura SSIC, asi hunhu hwekupisa kwakanyanya uye kuramba kwengura hazvina kunaka.
Hot Pressed Silicon Carbide (HPSIC). Upfu hwesilicon carbide hunoshandiswa sezvinhu zvekutanga. Zvishandiso zvekuwedzera simba zvinowanzova boron pamwe nekabhoni kana yttrium oxide pamwe nealuminium oxide. Kuwedzera simba kunoitika nekushandiswa panguva imwe chete kwesimba remagetsi nekupisa mukati me graphite die cavity. Maumbirwo acho mapuratifomu akareruka. Zvishandiso zvekuchenesa simba zvishoma zvinogona kushandiswa. Hunhu hwemagetsi hwezvinhu zvinopisa zvinomanikidzwa hunoshandiswa senzira yekutanga iyo mamwe maitiro anoenzaniswa nayo. Hunhu hwemagetsi hunogona kuchinjwa nekuchinja kwezvishandiso zvekuwedzera simba.
CVD Silicon Carbide (CVDSIC). Chinhu ichi chinoumbwa nemaitiro e chemical vapor deposition (CVD) ane chekuita ne reaction: CH3SiCl3 -> SiC + 3HCl. Reaction inoitwa pasi pemhepo yeH2 neSiC ichiiswa pa graphite substrate. Maitiro acho anoguma nechinhu chakachena kwazvo; zvisinei, ma plate akareruka chete ndiwo anogona kugadzirwa. Maitiro acho anodhura zvikuru nekuda kwenguva inononoka ye reaction.
Chemical Vapor Composite Silicon Carbide (CVCSiC). Maitiro aya anotanga ne graphite precursor yakagadzirwa ne machined kuita near-net shapes mu graphite state. Maitiro ekushandura anoita kuti chikamu che graphite chiite se in situ vapor solid-state reaction kuti igadzire polycrystalline, stoichiometrically correct SiC. Maitiro aya anodzorwa zvakasimba anobvumira magadzirirwo akaomarara kugadzirwa muchikamu cheSiC chakachinjwa chose chine hunyanzvi hwekushivirira kwakasimba uye kuchena kwakanyanya. Maitiro ekushandura anopfupisa nguva yekugadzirwa yakajairika uye anoderedza mari pane dzimwe nzira.* Kunobva (kunze kwezvakataurwa): Ceradyne Inc., Costa Mesa, Calif.
Nguva yekutumira: Chikumi-16-2018