ʻO ka Silicon Carbide i hoʻopili hou ʻia (RXSIC, ReSIC, RSIC, R-SIC). ʻO ka mea maka mua he silicon carbide. ʻAʻohe mea kōkua densification i hoʻohana ʻia. Hoʻomehana ʻia nā compacts ʻōmaʻomaʻo ma luna o 2200ºC no ka hoʻopaʻa hope ʻana. Loaʻa i ka mea hopena ma kahi o 25% porosity, kahi e kaupalena ai i kona mau waiwai mechanical; akā naʻe, hiki i ka mea ke maʻemaʻe loa. He mea hoʻokele waiwai loa ke kaʻina hana.
ʻO ka Reaction Bonded Silicon Carbide (RBSIC). ʻO nā mea maka mua he silicon carbide me ke kalapona. A laila hoʻokomo ʻia ka ʻāpana ʻōmaʻomaʻo me ka silicon heheʻe ma luna o 1450ºC me ka hopena: SiC + C + Si -> SiC. Loaʻa i ka microstructure kekahi nui o ka silicon keu, kahi e kaupalena ai i kona mau waiwai wela kiʻekiʻe a me ke kūpaʻa ʻana i ka pala. Loaʻa ka loli liʻiliʻi i ka wā o ke kaʻina hana; akā naʻe, aia pinepine kahi papa o ka silicon ma ka ʻili o ka ʻāpana hope. Ua lawe ʻia ʻo ZPC RBSiC i ka ʻenehana holomua, e hana ana i ka lining pale ʻaʻahu, nā papa, nā tile, ka lining cyclone, nā poloka, nā ʻāpana ʻokoʻa, a me nā nozzles FGD pale ʻaʻahu a me ka pala, ka mea hoʻololi wela, nā paipu, nā paipu, a pēlā aku.
ʻO Nitride Bonded Silicon Carbide (NBSIC, NSIC). ʻO nā mea maka mua he silicon carbide me ka pauka silicon. Hoʻokuʻu ʻia ka compact ʻōmaʻomaʻo i loko o kahi lewa naikokene kahi e hana ai ka hopena SiC + 3Si + 2N2 -> SiC + Si3N4. Hōʻike ka mea hope loa i kahi loli liʻiliʻi o ka dimensional i ka wā o ka hana ʻana. Hōʻike ka mea i kekahi pae o ka porosity (maʻamau ma kahi o 20%).
ʻO ka Silicon Carbide Sintered Pololei (SSIC). ʻO ka Silicon carbide ka mea maka mua. ʻO nā mea kōkua densification he boron me ke kalapona, a hana ʻia ka densification e kahi kaʻina hana paʻa ma luna o 2200ºC. ʻOi aku ka maikaʻi o kona mau waiwai wela kiʻekiʻe a me ke kūpaʻa ʻana i ka pala ma muli o ka nele o kahi pae lua aniani ma nā palena palaoa.
ʻO ka Liquid Phase Sintered Silicon Carbide (LSSIC). ʻO ka Silicon carbide ka mea maka mua. ʻO nā mea kōkua densification he yttrium oxide me ka alumini oxide. Hana ʻia ka densification ma luna o 2100ºC e kahi hopena wai-phase a hopena i kahi lua o ka pae aniani. ʻOi aku ka maikaʻi o nā waiwai mechanical ma mua o SSIC, akā ʻaʻole maikaʻi nā waiwai wela kiʻekiʻe a me ke kūpaʻa ʻana i ka corrosion.
ʻO ka Silicon Carbide i kaomi wela ʻia (HPSIC). Hoʻohana ʻia ka pauka Silicon carbide ma ke ʻano he mea maka mua. ʻO nā mea kōkua densification he boron me ke kalapona a i ʻole yttrium oxide me ka alumini oxide. Hana ʻia ka densification ma o ka hoʻopili like ʻana o ke kaomi mechanical a me ka mahana i loko o kahi lua make graphite. He mau papa maʻalahi nā ʻano. Hiki ke hoʻohana ʻia nā nui haʻahaʻa o nā mea kōkua sintering. Hoʻohana ʻia nā waiwai mechanical o nā mea i kaomi wela ʻia ma ke ʻano he kumu hoʻohālikelike e hoʻohālikelike ʻia ai nā kaʻina hana ʻē aʻe. Hiki ke hoʻololi ʻia nā waiwai uila e nā loli i nā mea kōkua densification.
ʻO CVD Silicon Carbide (CVDSIC). Hoʻokumu ʻia kēia mea e kahi kaʻina hana hoʻokahe mahu kemika (CVD) e pili ana i ka hopena: CH3SiCl3 -> SiC + 3HCl. Hana ʻia ka hopena ma lalo o kahi lewa H2 me ka SiC e waiho ʻia ana ma luna o kahi substrate graphite. ʻO ka hopena o ke kaʻina hana he mea maʻemaʻe loa; akā naʻe, hiki ke hana ʻia nā papa maʻalahi wale nō. He pipiʻi loa ke kaʻina hana ma muli o ka lohi o ka manawa hopena.
ʻO ka Chemical Vapor Composite Silicon Carbide (CVCSiC). Hoʻomaka kēia kaʻina hana me kahi mea mua o ka graphite ponoʻī i hana ʻia i loko o nā ʻano kokoke i ka ʻupena ma ke kūlana graphite. Hoʻokomo ke kaʻina hana hoʻololi i ka ʻāpana graphite i kahi hopena paʻa vapor in situ e hana i kahi polycrystalline, stoichiometrically correct SiC. ʻAe kēia kaʻina hana i kāohi paʻa ʻia i nā hoʻolālā paʻakikī e hana ʻia ma kahi ʻāpana SiC i hoʻololi piha ʻia nona nā hiʻohiʻona hoʻomanawanui paʻa a me ka maʻemaʻe kiʻekiʻe. Hoʻopōkole ke kaʻina hana hoʻololi i ka manawa hana maʻamau a hoʻemi i nā kumukūʻai ma luna o nā ʻano hana ʻē aʻe. * Puna (koe wale nō kahi i ʻōlelo ʻia): Ceradyne Inc., Costa Mesa, Calif.
Ka manawa hoʻouna: Iune-16-2018