An sake yin amfani da Silicon Carbide (RXSIC, ReSIC, RSIC, R-SIC). Kayan farko shine silicon carbide. Ba a amfani da kayan rage girman abu. Ana dumama ƙananan ƙwayoyin zuwa sama da 2200ºC don haɗakar ƙarshe. Kayan da aka samar yana da kusan kashi 25% na porosity, wanda ke iyakance halayen injina; duk da haka, kayan na iya zama tsarkakakke sosai. Tsarin yana da araha sosai.
Reaction Bonded Silicon Carbide (RBSIC). Kayan farko sune silicon carbide da carbon. Sannan ana shigar da sinadarin kore da silicon mai narkewa sama da 1450ºC tare da amsawar: SiC + C + Si -> SiC. Tsarin ƙananan ƙwayoyin halitta gabaɗaya yana da ɗan adadin silicon mai yawa, wanda ke iyakance halayen zafin jiki mai yawa da juriyar tsatsa. Ƙaramin canji yana faruwa yayin aikin; duk da haka, ana samun layin silicon sau da yawa a saman ɓangaren ƙarshe. Ana amfani da fasahar zamani ta ZPC RBSiC, tana samar da rufin juriyar lalacewa, faranti, tayal, rufin guguwa, tubalan, sassa marasa tsari, da bututun FGD masu juriyar lalacewa da tsatsa, mai musayar zafi, bututu, bututu, da sauransu.
Nitride Bonded Silicon Carbide (NBSIC, NSIC). Kayan farko sune silicon carbide tare da foda silicon. Ana kunna koren a cikin yanayin nitrogen inda amsawar SiC + 3Si + 2N2 -> SiC + Si3N4 ke faruwa. Kayan ƙarshe ba ya nuna ɗan canji mai girma yayin sarrafawa. Kayan yana nuna ɗan matakin porosity (yawanci kusan 20%).
Sintered Silicon Carbide (SSIC). Silicon carbide shine tushen farko na kayan aiki. Ana amfani da sinadarin boron da carbon, kuma yawan sinadarin yana faruwa ne ta hanyar tsarin amsawar yanayi mai ƙarfi sama da 2200ºC. Halayensa masu zafi da juriyar tsatsa sun fi kyau saboda rashin wani mataki na biyu mai kama da gilashi a iyakokin hatsi.
Ruwan Sintered Silicon Carbide (LSSIC). Silicon carbide shine farkon kayan aiki. Abubuwan da ke taimakawa wajen rage yawan sinadarin sune yttrium oxide da aluminum oxide. Yawan sinadarin yana faruwa sama da 2100ºC ta hanyar amsawar ruwa-mataki kuma yana haifar da mataki na biyu mai kama da gilashi. Halayen injiniya gabaɗaya sun fi SSIC kyau, amma halayen zafin jiki mai yawa da juriyar tsatsa ba su da kyau.
Ana amfani da foda na silicon carbide a matsayin kayan farko na kayan aiki. Abubuwan da ke taimakawa wajen rage yawan sinadarin sinadarin shine boron da carbon ko yttrium oxide da aluminum oxide. Yawan sinadarin yana faruwa ne ta hanyar amfani da matsin lamba na injiniya da zafin jiki a cikin ramin graphite. Siffofin faranti ne masu sauƙi. Ana iya amfani da ƙarancin adadin abubuwan da ke taimakawa wajen rage yawan sinadarin sinadarin. Ana amfani da kayan aikin injiniya na kayan da aka matsa masu zafi a matsayin tushen da ake kwatanta wasu hanyoyin da wasu hanyoyin. Ana iya canza kayan aikin lantarki ta hanyar canje-canje a cikin kayan aikin rage yawan sinadarin.
CVD Silicon Carbide (CVDSIC). Wannan abu yana samuwa ne ta hanyar tsarin adana tururin sinadarai (CVD) wanda ya haɗa da amsawar: CH3SiCl3 -> SiC + 3HCl. Ana gudanar da amsawar a ƙarƙashin yanayin H2 tare da sanya SiC a kan wani abu mai siffar graphite. Tsarin yana haifar da abu mai tsarki sosai; duk da haka, faranti masu sauƙi ne kawai za a iya yin su. Tsarin yana da tsada sosai saboda jinkirin lokacin amsawa.
Sinadarin Tururi Mai Haɗaka da Sinadarin Silicon Carbide (CVCSiC). Wannan tsari yana farawa ne da wani abin da ya fi ƙarfin graphite wanda aka ƙera shi zuwa siffofi kusa da net a cikin yanayin graphite. Tsarin juyawa yana tura ɓangaren graphite zuwa ga amsawar yanayin tururi mai ƙarfi a wuri don samar da SiC mai ƙarfi, mai daidaiton polycrystalline. Wannan tsari mai ƙarfi yana ba da damar samar da ƙira masu rikitarwa a cikin ɓangaren SiC wanda aka canza gaba ɗaya wanda ke da fasalulluka masu juriya da tsarki mai yawa. Tsarin juyawa yana rage lokacin samarwa na yau da kullun kuma yana rage farashi akan wasu hanyoyi.* Tushe (banda inda aka lura): Ceradyne Inc., Costa Mesa, Calif.
Lokacin Saƙo: Yuni-16-2018