Isigama Esidla Ngokudibaniswa Nokucutshungulwa Kwe-Silicon Carbide

I-Silicon Carbide ephinde yasetyenziswa (RXSIC, ReSIC, RSIC, R-SIC). Izinto zokuqala eziluhlaza yi-silicon carbide. Akukho zixhobo zokuqinisa ezisetyenziswayo. Iicompacts eziluhlaza zifudunyezwa zibe ngaphezulu kwama-2200ºC ukuze zihlanganiswe ekugqibeleni. Izinto eziphumayo zineembobo ezimalunga nama-25%, nto leyo ethintela iimpawu zayo zoomatshini; nangona kunjalo, izinto zinokuba msulwa kakhulu. Le nkqubo ingabizi kakhulu.
I-Reaction Bonded Silicon Carbide (RBSIC). Izinto zokuqala eziluhlaza yi-silicon carbide kunye ne-carbon. Icandelo eliluhlaza liza kufakwa kwi-silicon enyibilikisiweyo ngaphezulu kwe-1450ºC nge-reaction: SiC + C + Si -> SiC. I-microstructure ngokubanzi ine-silicon egqithisileyo, ethintela iipropati zayo zobushushu obuphezulu kunye nokumelana nokugqwala. Utshintsho oluncinci lwenzeka ngexesha lenkqubo; nangona kunjalo, umaleko we-silicon uhlala ukhona kumphezulu wenxalenye yokugqibela. I-ZPC RBSiC zamkelwe ngobuchwepheshe obuphambili, obuvelisa i-lining yokumelana nokugqwala, iiplates, iithayile, i-lining ye-cyclone, iibhloko, iindawo ezingaqhelekanga, kunye ne-nozzles ye-FGD yokumelana nokugqwala, i-heat exchanger, iipayipi, iityhubhu, njalo njalo.

I-Nitride Bonded Silicon Carbide (NBSIC, NSIC). Izinto zokuqala eziluhlaza yi-silicon carbide kunye nomgubo we-silicon. I-compact eluhlaza itshiswa emoyeni we-nitrogen apho kwenzeka khona i-reaction SiC + 3Si + 2N2 -> SiC + Si3N4. Izinto zokugqibela zibonisa utshintsho oluncinci ngexesha lokucubungula. Izinto zibonisa inqanaba elithile le-porosity (ngesiqhelo malunga ne-20%).

I-Direct Sintered Silicon Carbide (SSIC). I-Silicon carbide sisixhobo sokuqala. Izixhobo zokuqinisa i-density yi-boron kunye ne-carbon, kwaye i-density yenzeka ngenkqubo yokusabela ye-solid-state engaphezulu kwe-2200ºC. Iimpawu zayo zobushushu obuphezulu kunye nokumelana nokugqwala zingcono ngenxa yokungabikho kwesigaba sesibini esinjengeglasi kwimida yeenkozo.

I-Liquid Phase Sintered Silicon Carbide (LSSIC). I-Silicon carbide sisixhobo sokuqala. Izixhobo zokuqinisa yi-yttrium oxide kunye ne-aluminium oxide. Ukuqina kwenzeka ngaphezulu kwama-2100ºC nge-reaction ye-liquid-phase kwaye kuphumela kwisigaba sesibini esinjengeglasi. Iimpawu zoomatshini ngokubanzi zingcono kune-SSIC, kodwa iimpawu zobushushu obuphezulu kunye nokumelana nokugqwala azilunganga kangako.

I-Hot Pressed Silicon Carbide (HPSIC). I-Silicon carbide powder isetyenziswa njengezinto zokuqala. Izixhobo zokuqinisa ngokubanzi yi-boron kunye ne-carbon okanye i-yttrium oxide kunye ne-aluminium oxide. Ukuqina kwenzeka ngokusetyenziswa ngaxeshanye koxinzelelo loomatshini kunye nobushushu ngaphakathi kwe-graphite die cavity. Iimilo ziipleyiti ezilula. Izixa eziphantsi zezinto zokucoca zingasetyenziswa. Iimpawu zoomatshini zezinto ezixineneyo ezishushu zisetyenziswa njengesiseko apho ezinye iinkqubo zithelekiswa khona. Iimpawu zombane zinokutshintshwa lutshintsho kwizinto zokuqinisa.

I-CVD Silicon Carbide (CVDSIC). Le nto yenziwe yinkqubo yokufunxwa komphunga wekhemikhali (CVD) equka impendulo: CH3SiCl3 -> SiC + 3HCl. Impendulo yenziwa phantsi kwe-atmosphere ye-H2 apho i-SiC ifakwa kwi-substrate ye-graphite. Le nkqubo iphumela kwisixhobo esicocekileyo kakhulu; nangona kunjalo, iipleyiti ezilula kuphela ezinokwenziwa. Le nkqubo ibiza kakhulu ngenxa yexesha lokuphendula elicothayo.

I-Chemical Vapor Composite Silicon Carbide (CVCSiC). Le nkqubo iqala nge-graphite precursor eyodwa esetyenziswa kwi-near-net shapes kwi-graphite state. Inkqubo yokuguqula ithatha indawo ye-graphite kwi-in situ vapor solid-state reaction ukuvelisa i-polycrystalline, stoichiometrically correct SiC. Le nkqubo ilawulwa ngokuqinileyo ivumela uyilo oluntsonkothileyo ukuba lwenziwe kwi-SiC part eguqulwe ngokupheleleyo eneempawu zokunyamezelana okuqinileyo kunye nobunyulu obuphezulu. Inkqubo yokuguqula inciphisa ixesha eliqhelekileyo lokuvelisa kwaye inciphisa iindleko kunezinye iindlela.* Umthombo (ngaphandle kwalapho kuphawulwe khona): Ceradyne Inc., Costa Mesa, Calif.