I-SiC – I-Silicon Carbide

I-silicon carbide yatholakala ngo-1893 njenge-abrasive yezimboni yokugaya amasondo namabhuleki ezimoto. Cishe maphakathi nekhulu lama-20, ukusetshenziswa kwe-SiC wafer kwanda kwaze kwaba yingxenye yobuchwepheshe be-LED. Kusukela ngaleso sikhathi, iye yanda yaba izinhlelo zokusebenza eziningi ze-semiconductor ngenxa yezakhiwo zayo zomzimba ezizuzisayo. Lezi zakhiwo zibonakala ezinhlobonhlobo zokusetshenziswa kwayo ngaphakathi nangaphandle kwemboni ye-semiconductor. Njengoba uMthetho kaMoore ubonakala ufinyelela umkhawulo wawo, izinkampani eziningi embonini ye-semiconductor zibheke i-silicon carbide njengezinto ze-semiconductor zesikhathi esizayo. I-SiC ingakhiqizwa kusetshenziswa izinhlobo eziningi ze-SiC, yize ngaphakathi kwemboni ye-semiconductor, ama-substrate amaningi angama-4H-SiC, kanti i-6H- ayivami njengoba imakethe ye-SiC ikhulile. Uma kukhulunywa nge-4H- kanye ne-6H- silicon carbide, i-H imelela isakhiwo se-crystal lattice. Inombolo imelela ukulandelana kwe-stacking yama-athomu ngaphakathi kwesakhiwo sekristalu, lokhu kuchazwe eshadini lamakhono e-SVM ngezansi. Izinzuzo Zokuqina Kwe-Silicon Carbide Kunezinzuzo eziningi zokusebenzisa i-silicon carbide kune-substrates ye-silicon yendabuko. Enye yezinzuzo ezinkulu zale nto ukuthi ilukhuni. Lokhu kunikeza le nto izinzuzo eziningi, ngesivinini esiphezulu, izinga lokushisa eliphezulu kanye/noma ukusetshenziswa kwamandla aphezulu. Ama-wafer e-silicon carbide anomoya wokushisa ophezulu, okusho ukuthi angadlulisa ukushisa kusuka endaweni eyodwa kuya kwenye umthombo. Lokhu kuthuthukisa umbane wawo kagesi kanye nokugcina kuncane, enye yezinhloso ezivamile zokushintshela kuma-wafer e-SiC. Amandla okushisa Ama-substrate e-SiC nawo ane-coefficient ephansi yokwanda kokushisa. Ukwanda kokushisa inani kanye nesiqondiso into ekhula noma encipha njengoba ishisa noma iphola. Incazelo evame kakhulu yiqhwa, yize iziphatha ngendlela ehlukile kunezinsimbi eziningi, ikhula njengoba iphola futhi incipha njengoba ishisa. I-coefficient ephansi ye-silicon carbide yokwanda kokushisa isho ukuthi ayishintshi kakhulu ngobukhulu noma ngesimo njengoba ishiswa noma iphola, okwenza ifaneleke ukufakwa kumadivayisi amancane nokupakisha ama-transistors amaningi ku-chip eyodwa. Enye inzuzo enkulu yalezi substrate ukumelana kwazo okuphezulu nokushaqeka kokushisa. Lokhu kusho ukuthi zinamandla okushintsha amazinga okushisa ngokushesha ngaphandle kokuphuka noma ukuqhekeka. Lokhu kudala inzuzo ecacile lapho kwenziwa amadivayisi njengoba kungenye yezici zokuqina ezithuthukisa impilo nokusebenza kwe-silicon carbide uma kuqhathaniswa ne-silicon enkulu yendabuko. Ngaphezu kwamandla ayo okushisa, iyi-substrate eqinile kakhulu futhi ayisebenzi nama-acid, ama-alkali noma usawoti oncibilikisiwe emazingeni okushisa afinyelela ku-800°C. Lokhu kunikeza lawa ma-substrate ukuguquguquka ekusetshenzisweni kwawo futhi kusiza kakhulu ikhono lawo lokwenza i-silicon enkulu ezisetshenziswayo eziningi. Amandla ayo emazingeni okushisa aphezulu futhi ayivumela ukuthi isebenze ngokuphephile emazingeni okushisa angaphezu kuka-1600°C. Lokhu kuyenza ibe yi-substrate efanelekile cishe kunoma yikuphi ukusetshenziswa kwezinga lokushisa eliphezulu.