I-SiC - iSilicon Carbide

I-silicon carbide yafunyanwa ngo-1893 njengesixhobo sokugaya amavili kunye neebhuleki zeemoto. Malunga nenkulungwane yama-20, ukusetyenziswa kwe-SiC wafer kwanda kwaya kubandakanywa kwitekhnoloji ye-LED. Ukususela ngoko, iye yanda yaya kwiindlela ezininzi zokusetyenziswa kwe-semiconductor ngenxa yeempawu zayo zomzimba eziluncedo. Ezi mpawu zibonakala kuluhlu olubanzi lokusetyenziswa kwayo ngaphakathi nangaphandle kweshishini le-semiconductor. Njengoko uMthetho kaMoore ubonakala ufikelela kumda wawo, iinkampani ezininzi kwishishini le-semiconductor zijonge kwi-silicon carbide njengezinto ze-semiconductor zexesha elizayo. I-SiC inokuveliswa kusetyenziswa ii-polytypes ezininzi ze-SiC, nangona ngaphakathi kwishishini le-semiconductor, uninzi lwe-substrates luyi-4H-SiC, kunye ne-6H- eba yinto engaqhelekanga njengoko imakethi ye-SiC ikhulile. Xa kubhekiselwa kwi-4H- kunye ne-6H- silicon carbide, i-H imele ulwakhiwo lwe-crystal lattice. Inani limele ulandelelwano lwee-athomu ezikwisakhiwo sekristale, oku kuchazwe kwitshathi yamandla e-SVM ngezantsi. Iingenelo zoBulukhuni beSilicon Carbide Kukho iingenelo ezininzi zokusebenzisa i-silicon carbide kune-substrates ze-silicon zemveli. Enye yezona nzuzo ziphambili zale nto bubulukhuni bayo. Oku kunika le nto iingenelo ezininzi, kwisantya esiphezulu, kubushushu obuphezulu kunye/okanye kwi-voltage ephezulu. Ii-silicon carbide wafers zine-thermal conductivity ephezulu, oko kuthetha ukuba zinokudlulisela ubushushu ukusuka kwenye indawo ukuya kwenye iqula. Oku kuphucula i-conductivity yayo yombane kwaye ekugqibeleni ibe yi-miniaturization, enye yeenjongo eziqhelekileyo zokutshintshela kwii-SiC wafers. Amandla obushushu Ii-substrates ze-SiC nazo zine-coefficient ephantsi yokwandiswa kobushushu. Ukwandiswa kobushushu bubungakanani kunye necala into ekhula ngalo okanye incipha njengoko ishushu okanye iphola. Eyona nkcazo ixhaphakileyo ngumkhenkce, nangona iziphatha ngokuchaseneyo neentlobo ezininzi zesinyithi, iyanda njengoko ipholile kwaye incipha njengoko ishushu. I-coefficient ephantsi ye-silicon carbide yokwandiswa kobushushu ithetha ukuba ayitshintshi kakhulu ngobukhulu okanye imo njengoko ishushu okanye iphola, nto leyo eyenza ifaneleke ukufakwa kwizixhobo ezincinci kunye nokupakisha ii-transistors ezininzi kwi-chip enye. Enye inzuzo enkulu yezi substrates kukuxhathisa kwazo okuphezulu kwi-thermal shock. Oku kuthetha ukuba zinokukwazi ukutshintsha amaqondo obushushu ngokukhawuleza ngaphandle kokuqhekeka okanye ukuqhekeka. Oku kudala inzuzo ecacileyo xa kusenziwa izixhobo kuba lolunye uphawu lokuqina oluphucula ubomi kunye nokusebenza kwe-silicon carbide xa kuthelekiswa ne-silicon enkulu yendabuko. Ngaphezulu kwamandla ayo obushushu, yi-substrate eqinileyo kwaye ayisebenzi ngee-asidi, ii-alkalis okanye iityuwa ezinyibilikisiweyo kumaqondo obushushu afikelela kwi-800°C. Oku kunika ezi substrates ukuguquguquka kwiindlela zazo zokusebenza kwaye kunceda ngakumbi ukukwazi kwazo ukwenza i-silicon enkulu kwiindlela ezininzi zokusebenza. Amandla ayo kumaqondo obushushu aphezulu akwavumela ukuba isebenze ngokukhuselekileyo kumaqondo obushushu angaphezu kwe-1600°C. Oku kuyenza ibe yi-substrate efanelekileyo phantse kuyo nayiphi na indlela yokusebenzisa amaqondo obushushu aphezulu.