SiC - Silicon Carbide

Silicon carbide yakawanikwa muna 1893 sechinhu chinokwevera maindasitiri chekugadzira mavhiri nemabhureki emotokari. Pakati pezana remakore rechi20, kushandiswa kweSiC wafer kwakawedzera kusvika pakuva tekinoroji ye LED. Kubva ipapo, yakawedzera kuita mashandisirwo akawanda e semiconductor nekuda kwehunhu hwayo hwakanaka hwepanyama. Hunhu uhwu hunoonekwa mukushandiswa kwayo kwakasiyana-siyana mukati nekunze kweindasitiri ye semiconductor. Nemutemo waMoore uchiratidzika kunge wasvika pamuganho wawo, makambani mazhinji ari mukati meindasitiri ye semiconductor ari kutarisa silicon carbide sechinhu che semiconductor cheramangwana. SiC inogona kugadzirwa uchishandisa ma polytypes akawanda eSiC, kunyangwe mukati meindasitiri ye semiconductor, ma substrates mazhinji ari 4H-SiC, ne6H- ichiva shoma sezvo musika weSiC wakura. Kana tichitaura nezve 4H- uye 6H- silicon carbide, H inomiririra chimiro che crystal lattice. Nhamba inomiririra kurongeka kwemaatomu mukati me crystal structure, izvi zvinotsanangurwa muSVM capabilities chart iri pazasi. Mabhenefiti eSilicon Carbide Hardness Kune mabhenefiti akawanda ekushandisa silicon carbide pane mamwe ma silicon substrates echinyakare. Chimwe chezvakanakira zvikuru zvechinhu ichi kuoma kwacho. Izvi zvinopa chinhu ichi mabhenefiti akawanda, mukushandiswa kwekumhanya kwakanyanya, kupisa kwakanyanya uye/kana voltage yakakwira. Mawafer eSilicon carbide ane thermal conductivity yakakwira, zvinoreva kuti anogona kutamisa kupisa kubva pane imwe nzvimbo kuenda kune imwe tsime. Izvi zvinovandudza power conductivity yayo uye pakupedzisira miniaturization, chimwe chezvinangwa zvakajairika zvekushandura kune mawafer eSiC. Kugona kwekupisa Mawafer eSiC anewo low coefficient yekuwedzera kupisa. Kuwedzerwa kwekupisa ndiko huwandu uye gwara iro chinhu chinokura kana kudzika kana kuchipisa kana kutonhorera. Tsananguro inowanzo zivikanwa ichando, kunyangwe ichiita zvakasiyana nesimbi zhinji, ichikura sezvo ichitonhora uye ichidzikira sezvo ichipisa. Silicon carbide's low coefficient yekuwedzera kupisa zvinoreva kuti haichinje zvakanyanya muhukuru kana chimiro painopiswa kana kutonhodzwa, izvo zvinoita kuti ive yakakwana yekuisa mumidziyo midiki uye kurongedza ma transistors akawanda pane imwe chip. Imwe mukana mukuru weaya ma substrates ndeyekudzivirira kwavo kwakanyanya kupiswa nekupisa. Izvi zvinoreva kuti vane kugona kushandura tembiricha nekukurumidza pasina kutyoka kana kutsemuka. Izvi zvinopa mukana wakajeka pakugadzira michina sezvo iri imwe hunhu hwekusimba hunovandudza hupenyu hwesilicon carbide uye mashandiro ayo zvichienzaniswa nesilicon yakawanda yechinyakare. Pamusoro pekugona kwayo kupisa, isubstrate yakasimba uye haisangani nemaacid, alkalis kana munyu wakanyungudutswa patembiricha inosvika 800°C. Izvi zvinoita kuti substrates idzi dzive dzakasiyana-siyana mukushandiswa kwadzo uye zvinobatsirawo kugona kwadzo kupfuura silicon yakawanda mukushandiswa kwakawanda. Simba rayo patembiricha yakakwirira rinoibvumirawo kushanda zvakachengeteka patembiricha inodarika 1600°C. Izvi zvinoita kuti ive substrate yakakodzera chero ipi zvayo yekushandiswa patembiricha yepamusoro.