An gano silicon carbide a shekarar 1893 a matsayin abin gogewa na masana'antu don ƙafafun niƙa da birki na mota. Kusan tsakiyar ƙarni na 20, amfani da wafer na SiC ya girma ya shiga cikin fasahar LED. Tun daga lokacin, ya faɗaɗa zuwa aikace-aikacen semiconductor da yawa saboda fa'idodinsa na zahiri. Waɗannan kaddarorin suna bayyana a cikin kewayon amfaninsa a ciki da wajen masana'antar semiconductor. Tare da Dokar Moore ta bayyana ta kai ga iyakarta, kamfanoni da yawa a cikin masana'antar semiconductor suna neman silicon carbide a matsayin kayan semiconductor na gaba. Ana iya samar da SiC ta amfani da nau'ikan SiC da yawa, kodayake a cikin masana'antar semiconductor, yawancin substrates ko dai 4H-SiC ne, tare da 6H- ya zama ƙasa da yawa yayin da kasuwar SiC ta girma. Idan ana maganar 4H- da 6H- silicon carbide, H yana wakiltar tsarin layin lu'ulu'u. Lambar tana wakiltar jerin tarin atoms a cikin tsarin lu'ulu'u, an bayyana wannan a cikin jadawalin ƙarfin SVM da ke ƙasa. Fa'idodin Taurin Silicon Carbide Akwai fa'idodi da yawa ga amfani da silicon carbide akan ƙarin abubuwan silicon na gargajiya. Ɗaya daga cikin manyan fa'idodin wannan kayan shine taurinsa. Wannan yana ba kayan fa'idodi da yawa, a cikin babban gudu, babban zafin jiki da/ko aikace-aikacen ƙarfin lantarki mai yawa. Wafers ɗin silicon carbide suna da babban ƙarfin zafi, wanda ke nufin za su iya canja wurin zafi daga wani wuri zuwa wani rijiya. Wannan yana inganta ƙarfin lantarki da kuma rage shi, ɗaya daga cikin manufofin gama gari na canzawa zuwa wafers ɗin SiC. Ƙarfin zafi SiC substrates suma suna da ƙarancin ƙimar don faɗaɗa zafi. Faɗaɗa zafi shine adadin da alkiblar da abu ke faɗaɗawa ko ƙunƙurawa yayin da yake zafi ko sanyi. Bayanin da aka fi sani shine kankara, kodayake yana yin aiki akasin yawancin ƙarfe, yana faɗaɗa yayin da yake sanyi da raguwa yayin da yake zafi. Ƙananan ƙimar silicon carbide don faɗaɗa zafi yana nufin cewa ba ya canzawa sosai a girma ko siffa yayin da ake dumama shi ko sanyaya shi, wanda ya sa ya dace don dacewa da ƙananan na'urori da kuma tattara ƙarin transistor a kan guntu ɗaya. Wata babbar fa'idar waɗannan substrates shine babban juriyarsu ga girgizar zafi. Wannan yana nufin suna da ikon canza yanayin zafi da sauri ba tare da karyewa ko fashewa ba. Wannan yana haifar da fa'ida bayyananne lokacin ƙera na'urori domin wani siffa ce ta tauri da ke inganta tsawon rai da aikin silicon carbide idan aka kwatanta da silicon na gargajiya. Baya ga ƙarfinsa na zafi, substrate ne mai ɗorewa kuma baya amsawa da acid, alkalis ko gishirin narkewa a zafin jiki har zuwa 800°C. Wannan yana ba waɗannan substrate damar yin amfani da su da yawa kuma yana taimakawa wajen yin aiki da silicon mai yawa a aikace-aikace da yawa. Ƙarfinsa a yanayin zafi mai yawa kuma yana ba shi damar aiki lafiya a yanayin zafi sama da 1600°C. Wannan ya sa ya zama substrate da ya dace da kusan kowace aikace-aikacen zafi mai yawa.
Lokacin Saƙo: Yuli-09-2019