SiC - Silicon Carbide

Ua ʻike ʻia ʻo Silicon carbide i ka makahiki 1893 ma ke ʻano he mea hoʻopōʻino ʻoihana no nā huila wili a me nā paleki kaʻa. Ma kahi o ka waena o ke kenekulia 20, ua ulu ka hoʻohana ʻana o ka wafer SiC e hoʻokomo i loko o ka ʻenehana LED. Mai ia manawa, ua hoʻonui ʻia i loko o nā noi semiconductor he nui ma muli o kona mau waiwai kino maikaʻi. ʻIke ʻia kēia mau waiwai i kona ākea o nā hoʻohana i loko a ma waho o ka ʻoihana semiconductor. Me ke ʻano o ke Kānāwai Moore e hiki aku ana i kona palena, nui nā hui i loko o ka ʻoihana semiconductor e nānā nei i ka silicon carbide ma ke ʻano he mea semiconductor o ka wā e hiki mai ana. Hiki ke hana ʻia ʻo SiC me ka hoʻohana ʻana i nā polytypes he nui o SiC, ʻoiai i loko o ka ʻoihana semiconductor, ʻo ka hapa nui o nā substrates he 4H-SiC, me 6H- e lilo ana i mea maʻamau ʻole i ka ulu ʻana o ka mākeke SiC. Ke kuhikuhi nei i ka 4H- a me 6H- silicon carbide, hōʻike ka H i ke ʻano o ka lattice kristal. Hōʻike ka helu i ke kaʻina stacking o nā ʻātoma i loko o ke ʻano kristal, ua wehewehe ʻia kēia ma ka pakuhi hiki SVM ma lalo nei. Nā Pono o ka Paʻakikī Silicon Carbide Nui nā pono o ka hoʻohana ʻana i ka silicon carbide ma luna o nā substrates silicon kuʻuna. ʻO kekahi o nā pono nui o kēia mea ʻo kona paʻakikī. Hāʻawi kēia i nā pono he nui i ka mea, i ka wikiwiki kiʻekiʻe, ka mahana kiʻekiʻe a/a i ʻole nā ​​noi uila kiʻekiʻe. Loaʻa i nā wafers carbide Silicon ka conductivity thermal kiʻekiʻe, ʻo ia hoʻi hiki iā lākou ke hoʻoili i ka wela mai kekahi wahi a i kekahi luawai. Hoʻomaikaʻi kēia i kāna conductivity uila a me ka miniaturization hope loa, kekahi o nā pahuhopu maʻamau o ka hoʻololi ʻana i nā wafers SiC. Nā hiki thermal Loaʻa i nā substrates SiC kahi coefficient haʻahaʻa no ka hoʻonui thermal. ʻO ka hoʻonui thermal ka nui a me ke kuhikuhi e hoʻonui ai a ʻaelike paha kahi mea i ka wā e wela ai a hoʻomaʻalili paha. ʻO ka wehewehe maʻamau ka hau, ʻoiai ke hana nei ia ma ke ʻano ʻē aʻe o ka hapa nui o nā metala, e hoʻonui ana i ka wā e hoʻomaʻalili ai a emi iho i ka wā e wela ai. ʻO ke coefficient haʻahaʻa o Silicon carbide no ka hoʻonui thermal ʻo ia hoʻi ʻaʻole ia e loli nui i ka nui a i ʻole ke ʻano i ka wā e wela ai a hoʻomaʻalili ʻia paha, kahi e kūpono ai no ke komo ʻana i nā mea liʻiliʻi a me ka hoʻopili ʻana i nā transistors hou aʻe ma kahi chip hoʻokahi. ʻO kekahi pono nui o kēia mau substrates ʻo ko lākou kū'ē kiʻekiʻe i ka haʻalulu thermal. ʻO ia hoʻi, loaʻa iā lākou ka hiki ke hoʻololi koke i nā mahana me ka ʻole o ka haki a haki paha. Hoʻokumu kēia i kahi pono maopopo i ka wā e hana ai i nā mea hana no ka mea he ʻano paʻakikī ʻē aʻe ia e hoʻomaikaʻi ai i ke ola a me ka hana o ka silicon carbide i ka hoʻohālikelike ʻana i ka silicon bulk kuʻuna. Ma luna o kona mau hiki ke hoʻomehana, he substrate paʻa loa ia a ʻaʻole ia e pane me nā waikawa, alkalis a i ʻole nā ​​​​paʻakai hoʻoheheʻe ʻia i nā mahana a hiki i 800 ° C. Hāʻawi kēia i kēia mau substrates i ka versatility i kā lākou mau noi a kōkua hou i ko lākou hiki ke hana ma mua o ka silicon bulk i nā noi he nui. ʻO kona ikaika i nā mahana kiʻekiʻe e hiki ai iā ia ke hana palekana i nā mahana ma luna o 1600 ° C. ʻO kēia ka mea e lilo ai ia i substrate kūpono no kekahi noi wela kiʻekiʻe.