1. Ke kū'ē ʻana i ka palaho
Nā nozzles FGDhana i nā wahi ʻino loa e loaʻa ana nā sulfur oxides, chlorides, a me nā kemika ʻino ʻē aʻe. Hōʻike ka seramika Silicon carbide (SiC) i ke kūpaʻa ʻino loa me ka emi ma mua o 0.1% o ka pohō nui ma nā hopena pH 1-14 (e like me ka hoʻāʻo ʻana o ASTM C863). Ke hoʻohālikelike ʻia me ke kila kila (PREN 18-25) a me nā mea hoʻohui nickel (PREN 30-40), mālama ʻo SiC i ka pono o ke kūkulu ʻana me ka ʻole o ka pitting a i ʻole ka haki ʻana o ka corrosion stress ʻoiai i loko o nā waikawa i hoʻopaʻa ʻia i nā mahana kiʻekiʻe.
2. Paʻa o ka Mahana Kiʻekiʻe
ʻO ka maʻamau, ʻo ka mahana hana i loko o nā ʻōnaehana desulfurization kinoea flue pulu ma waena o 60-80°C me nā kui e ʻoi aku ana ma mua o 120°C. Mālama ka seramika SiC i 85% o kona ikaika wela o ka lumi ma 1400°C, e ʻoi aku ana ma mua o nā seramika alumina (e nalowale ana ka ikaika o 50% ma 1000°C) a me nā kila kūpaʻa wela. ʻO kona conductivity thermal (120 W/m·K) e hiki ai ke hoʻokuʻu pono i ka wela, e pale ana i ka hōʻiliʻili ʻana o ke kaumaha thermal.
3. Ke kū'ē ʻana i ka ʻaʻahu
Me ka paʻakikī Vickers o 28 GPa a me ka paʻakikī haki o 4.6 MPa·m¹/², hōʻike ʻo SiC i ke kūpaʻa ʻana i ka erosion e kūʻē i nā ʻāpana lehu lele (Mohs 5-7). Hōʻike nā hoʻokolohua kahua i nā nozzles SiC e mālama i ka <5% wear ma hope o 20,000 mau hola lawelawe, hoʻohālikelike ʻia me 30-40% wear i nā nozzles alumina a me ka hāʻule piha ʻana o nā metala i uhi ʻia i ka polymer i loko o 8,000 mau hola.
4. Nā ʻano o ke kahe ʻana
ʻO ka ʻili ʻole e pulu ana o ka SiC i hoʻopaʻa ʻia me ka hopena (kihi hoʻopili >100°) e hiki ai ke hoʻopuehu slurry pololei me nā waiwai CV <5%. ʻO kona ʻili laumania loa (Ra 0.2-0.4μm) e hōʻemi ana i ka hāʻule ʻana o ke kaomi ma 15-20% i hoʻohālikelike ʻia me nā nozzles metala, me ka mālama ʻana i nā coefficients hoʻokuʻu paʻa (± 1%) ma luna o ka hana lōʻihi.
5. Ka maʻalahi o ka mālama ʻana
ʻO ka inertness kemika o SiC e ʻae i nā ʻano hoʻomaʻemaʻe ikaika e like me:
- Ka wai hoʻoheheʻe kiʻekiʻe (a hiki i ka 250 bar)
- Hoʻomaʻemaʻe ultrasonic me nā hopena alkaline
- Hoʻomaʻemaʻe mahu ma 150°C
Me ka ʻole o ka pilikia o ka hōʻino ʻana o ka ʻili, he mea maʻamau ia i nā nozzles metala i hoʻopaʻa ʻia i ka polymer a i ʻole i uhi ʻia.
6. Hoʻokele Waiwai Ola
ʻOiai ʻo ke kumukūʻai mua no nā nozzles SiC he 2-3 × ke kiʻekiʻe ma mua o ke kila kila 316L maʻamau, ʻo ko lākou ola lawelawe 8-10 makahiki (vs 2-3 mau makahiki no nā metala) e hōʻemi ana i ka pinepine o ka hoʻololi ʻana ma 70%. Hōʻike nā kumukūʻai nona ka huina i ka mālama kālā he 40-60% ma luna o 10 mau makahiki, me ka ʻole o ka downtime no nā hoʻoponopono in-situ.
7. Hoʻohālikelike Kaiapuni
Hōʻike ʻo SiC i ka hana kū ʻole ma nā kūlana koʻikoʻi:
- Ke kū'ē ʻana i ka paʻakai: 0% ka loli nuipa ma hope o 5000hr ASTM B117 ho'āʻo
- Hana ʻana i ka hau hau waikawa: Kū i ka mahu H2SO4 160°C
- Ke kūpaʻa haʻalulu wela: Ola i nā pōʻaiapuni hoʻopau 1000°C→25°C
8. Nā Waiwai Anti-scaling
Hoʻokumu ke ʻano atomika covalent o SiC i kahi ʻili non-reactive me nā helu scaling he 80% haʻahaʻa ma mua o nā mea ʻē aʻe metala. Hōʻike nā haʻawina crystallographic e hana nā waihona calcite a me gypsum i nā pilina nāwaliwali (adhesion <1 MPa) ma SiC versus >5 MPa ma nā metala, e hiki ai ke wehe maʻalahi i ka mechanical.
Hopena ʻenehana
ʻO ka seramika carbide Silicon ke koho mea kūpono loa no nā nozzles FGD ma o ka loiloi hana piha:
- 10× lōʻihi ke ola lawelawe ma mua o nā koho metala ʻē aʻe
- 92% ka emi ʻana o ka mālama ʻole ʻia
- 35% ka hoʻomaikaʻi ʻana i ka pono o ka wehe ʻana i ka SO2 ma o nā ʻano pīpī kūlike
- Hoʻokō piha me nā kūlana hoʻokuʻu EPA 40 CFR Māhele 63
Me ka holomua o nā ʻano hana hana e like me ka sintering pae wai a me ka uhi ʻana o CVD, ke hoʻokō nei nā nozzles SiC hanauna hou i nā hoʻopau ʻili sub-micron a me nā geometries paʻakikī i hiki ʻole ke loaʻa ma mua i nā keramika. Hoʻonoho kēia hoʻomohala ʻenehana i ka silicon carbide ma ke ʻano he mea koho no nā ʻōnaehana hoʻomaʻemaʻe kinoea flue hanauna hou.
Ka manawa hoʻouna: Malaki-20-2025