Izitsha zobumba ze-silicon carbide (SiC)sezibe yizinto eziyinhloko emkhakheni wezinto zobumba zesakhiwo ezishisa kakhulu ngenxa yokwanda kwazo kokushisa okuphansi, ukuhanjiswa kokushisa okuphezulu, ubulukhuni obuphezulu, kanye nokuqina okuhle kakhulu kokushisa namakhemikhali. Zisetshenziswa kabanzi emikhakheni ebalulekile njengezindiza, amandla enuzi, ezempi, kanye ne-semiconductors.
Kodwa-ke, izibopho ze-covalent eziqinile kakhulu kanye ne-coefficient ephansi yokusabalalisa kwe-SiC kwenza kube nzima ukuqina kwayo. Ngenxa yalokhu, imboni ithuthukise ubuchwepheshe obuhlukahlukene bokuthulula, kanti i-SiC ceramics elungiselelwe ubuchwepheshe obuhlukene inomehluko omkhulu ekwakhiweni kwezinto ezincane, izakhiwo, kanye nezimo zokusetshenziswa. Nasi ukuhlaziywa kwezici eziyinhloko ze-silicon carbide ceramics ezinhlanu eziyinhloko.
1. Izitsha zobumba ze-SiC ezingasebenzisi umfutho (S-SiC)
Izinzuzo Eziyinhloko: Ifanele izinqubo eziningi zokubumba, izindleko eziphansi, ezingakhawulelwe ngesimo nosayizi, iyindlela elula kakhulu yokusila ukuze kufezwe ukukhiqizwa okukhulu. Ngokufaka i-boron ne-carbon ku-β – SiC equkethe amanani amancane omoya-mpilo bese uyisila ngaphansi komkhathi ongasebenzi cishe ku-2000 ℃, umzimba osila onesisindo esingu-98% ungatholakala. Kunezinqubo ezimbili: isigaba esiqinile nesigaba soketshezi. Esokuqala sinobukhulu nobumsulwa obuphezulu, kanye nokuqhuba okuphezulu kokushisa kanye namandla okushisa aphezulu.
Izicelo ezijwayelekile: Ukukhiqizwa ngobuningi kwezindandatho zokuvala ezingagugi futhi ezingagqwali kanye nama-bearings ashelelayo; Ngenxa yobulukhuni bayo obuphezulu, amandla adonsela phansi aphansi, kanye nokusebenza kahle kwe-ballistic, isetshenziswa kabanzi njengezivikelo ezingangeni zinhlamvu zezimoto nemikhumbi, kanye nokuvikela ama-safes avamile kanye nezimoto zokuthutha imali. Ukumelana kwayo nokushaywa okuningi kuphakeme kune-SiC ceramics evamile, futhi iphuzu lokuqhekeka kwezivikelo ezingagugi zesilinda lingafinyelela ngaphezu kwamathani angu-65.
2. Izitsha zobumba ze-SiC eziphendulwe ngokusabela (RB SiC)
Izinzuzo Eziyinhloko: Ukusebenza kahle kakhulu kwemishini, amandla aphezulu, ukumelana nokugqwala, kanye nokumelana nokushiswa kwe-oxidation; Izinga lokushisa eliphansi lokushiswa kanye nezindleko, elikwazi ukwakha cishe usayizi ofanele. Inqubo ihilela ukuxuba umthombo wekhabhoni nempuphu ye-SiC ukuze kukhiqizwe i-billet. Emazingeni okushisa aphezulu, i-silicon encibilikisiwe ingena ku-billet bese isabela ku-carbon ukuze yakhe i-β – SiC, ehlangana ne-α – SiC yokuqala bese igcwalisa izimbobo. Ukushintsha kosayizi ngesikhathi sokushiswa kuncane, okwenza kufaneleke ukukhiqizwa kwezimboni kwemikhiqizo enomumo oyinkimbinkimbi.
Izicelo ezijwayelekile: Imishini ye-kiln eshisa kakhulu, amashubhu akhanyayo, ama-heat exchanger, ama-nozzle okususa i-sulfur; Ngenxa ye-coefficient yayo yokukhulisa ukushisa ephansi, i-modulus ephezulu yokunwebeka, kanye nezici zokwakheka kwenethi, isibe yinto efanelekile yezibonisi zesikhala; Ingaphinde ithathe indawo yengilazi ye-quartz njengezinto ezisekelayo zamashubhu kagesi kanye nemishini yokukhiqiza ama-chip e-semiconductor.
3. Izitsha zobumba ze-SiC ezicindezelwe ngokushisa (i-HP SiC)
Inzuzo Eyinhloko: Ukushiswa okuhambisanayo ngaphansi kokushisa okuphezulu kanye nokucindezela okuphezulu, i-powder isesimweni se-thermoplastic, esivumela inqubo yokudlulisa isisindo. Ingakhiqiza imikhiqizo enezinhlamvu ezincane, ukuminyana okuphezulu, kanye nezakhiwo ezinhle zemishini emazingeni okushisa aphansi nangesikhathi esifushane, futhi ingafinyelela ukuminyana okuphelele kanye nesimo sokushiswa okuhlanzekile cishe.
Ukusetshenziswa okuvamile: Ekuqaleni yayisetshenziswa njengezingubo zokuvikela izinhlamvu zamalungu eqembu lezindiza ezinophephela emhlane lase-US ngesikhathi seMpi yaseVietnam, imakethe yezikhali yathathelwa indawo yi-hot pressed boron carbide; Njengamanje, isetshenziswa kakhulu ezimweni ezinenani eliphezulu, njengezinkambu ezinezidingo eziphakeme kakhulu zokulawula ukwakheka, ubumsulwa, kanye nokuqina, kanye nezinkambu zezimboni zenuzi ezingagugi futhi ezingagugi.
4. Izitsha zobumba ze-SiC eziphinde zasetshenziswa (R-SiC)
Inzuzo Eyinhloko: Asikho isidingo sokwengeza izinsiza zokusila, kuyindlela evamile yokulungiselela ubumsulwa obuphezulu kakhulu kanye namadivayisi amakhulu e-SiC. Le nqubo ihilela ukuxuba izimpushana ze-SiC eziqinile nezincane ngokulingana bese zikhiwa, zisila endaweni engasebenzi kahle ku-2200 ~ 2450 ℃. Izinhlayiya ezincane ziyahwamuka futhi zijiye lapho kuhlangana izinhlayiya eziqinile ukuze zakhe izinto zobumba, ngobunzima obulandela idayimane kuphela. I-SiC igcina amandla aphezulu okushisa aphezulu, ukumelana nokugqwala, ukumelana nokushiswa kwe-oxidation, kanye nokumelana nokushaqeka kokushisa.
Izicelo ezijwayelekile: Ifenisha yesitofu esishisa kakhulu, ama-heat exchanger, ama-nozzle okushisa; Emkhakheni wezindiza kanye nezempi, isetshenziselwa ukukhiqiza izingxenye zesakhiwo semikhumbi-mkhathi njengezinjini, ama-tail fin, kanye ne-fuselage, okungathuthukisa ukusebenza kwemishini kanye nokuphila kwayo kwenkonzo.
5. Izitsha zobumba ze-SiC ezifakwe yi-silicon (i-SiSiC)
Izinzuzo Eziyinhloko: Okufanele kakhulu ekukhiqizweni kwezimboni, ngesikhathi esifushane sokusila, izinga lokushisa eliphansi, eligcwele ngokuphelele futhi elingaguquguquki, elenziwe nge-SiC matrix kanye nesigaba se-Si esingenile, esihlukaniswe izinqubo ezimbili: ukungena koketshezi kanye nokungena kwegesi. Lesi sakamuva sinezindleko eziphakeme kodwa sinobukhulu obungcono kanye nokufana kwe-silicon yamahhala.
Izicelo ezijwayelekile: ukubhoboka okuphansi, ukungabi namoya omuhle, kanye nokumelana okuphansi kusiza ekuqedeni ugesi ongashintshi, ofanele ukukhiqiza izingxenye ezinkulu, eziyinkimbinkimbi noma ezingenalutho, ezisetshenziswa kabanzi emishinini yokucubungula ye-semiconductor; Ngenxa ye-modulus yayo ephezulu yokunwebeka, elula, enamandla aphezulu, kanye nokungabi namoya okuhle kakhulu, iyinto ekhethwayo esebenza kahle kakhulu ensimini yezindiza, engamelana nemithwalo ezindaweni zasemkhathini futhi iqinisekise ukunemba nokuphepha kwemishini.
Isikhathi sokuthunyelwe: Septhemba-02-2025