Iiseramikhi zeSilicon carbide (SiC)Ziye zaba zizinto eziphambili kwicandelo le-ceramics zesakhiwo ezinobushushu obuphezulu ngenxa yokwanda kwazo okuphantsi kobushushu, ukuhanjiswa kobushushu okuphezulu, ubulukhuni obuphezulu, kunye nozinzo oluhle kakhulu lobushushu kunye neekhemikhali. Zisetyenziswa kakhulu kwiindawo eziphambili ezifana ne-aerospace, amandla enyukliya, ezomkhosi, kunye nee-semiconductors.
Nangona kunjalo, ii-covalent bonds ezinamandla kakhulu kunye ne-SiC diffusion coefficient ephantsi kwenza ukuba i-densification yayo ibe nzima. Ngenxa yesi sizathu, eli shishini liphuhlise ubuchwepheshe obahlukeneyo bokuthambisa, kwaye ii-SiC ceramics ezilungiselelwe ziiteknoloji ezahlukeneyo zinomahluko omkhulu kwi-microstructure, iipropati, kunye neemeko zokusetyenziswa. Nantsi uhlalutyo lweempawu eziphambili zee-silicon carbide ceramics ezintlanu eziphambili.
1. Iiseramikhi zeSiC ezingxinwanga ngumoya (S-SiC) ezingacinezelwanga ngumoya
Iingenelo eziphambili: Ifanelekile kwiinkqubo ezininzi zokubumba, ixabiso liphantsi, ayithintelwanga bubume nobukhulu, yeyona ndlela ilula yokusila ukuze kufezekiswe imveliso yobuninzi. Ngokufaka i-boron kunye ne-carbon kwi-β-SiC equlethe izixa ezincinci zeoksijini kwaye uyisila phantsi komoya ongasebenziyo malunga ne-2000 ℃, umzimba osila one-density yethiyori ye-98% unokufunyanwa. Kukho iinkqubo ezimbini: isigaba esiqinileyo kunye nesigaba solwelo. Esi sokuqala sinoxinano oluphezulu kunye nobunyulu, kunye nokuqhuba okuphezulu kobushushu kunye namandla obushushu aphezulu.
Izicelo eziqhelekileyo: Ukuveliswa ngobuninzi kweeringi zokuvala ezinganyangekiyo nezinganyangekiyo ngumhlwa kunye neebheringi ezityibilikayo; Ngenxa yobunzima bayo obuphezulu, umxhuzulane ophantsi, kunye nokusebenza kakuhle kwe-ballistic, isetyenziswa kakhulu njengesixhobo sokuzikhusela kwiimoto nakwiinqanawa, kunye nokukhusela iisefu zabantu kunye nezithuthi zokuthutha imali. Ukumelana kwayo neengozi ezininzi kungaphezulu kune-SiC ceramics eqhelekileyo, kwaye indawo yokuqhekeka kwesikhuselo esikhaphukhaphu esijikelezayo sinokufikelela kwiitoni ezingama-65.
2. Iiseramikhi zeSiC ezixutywe neReaction (RB SiC)
Iingenelo eziphambili: Ukusebenza kakuhle koomatshini, amandla aphezulu, ukumelana nokugqwala, kunye nokumelana ne-oxidation; Ubushushu obuphantsi bokutsha kunye neendleko, ezikwaziyo ukwenza ubungakanani obusondeleyo. Le nkqubo ibandakanya ukuxuba umthombo wekhabhoni nomgubo weSiC ukuvelisa i-billet. Kumaqondo obushushu aphezulu, i-silicon enyibilikisiweyo ingena kwi-billet kwaye isabela kwikhabhoni ukwenza i-β – SiC, edibanisa ne-α – SiC yokuqala kwaye izalise iimbobo. Utshintsho lobungakanani ngexesha lokutsha luncinci, okwenza ukuba lufaneleke kwimveliso yemizi-mveliso yeemveliso ezimile ngendlela enzima.
Izicelo eziqhelekileyo: Izixhobo ze-oven ezinobushushu obuphezulu, iityhubhu ezikhazimlayo, ii-heat exchangers, ii-nozzles ze-desulfurization; Ngenxa ye-coefficient yayo yokwandiswa kobushushu obuphantsi, i-modulus ephezulu ye-elastic, kunye neempawu zokwakheka kwe-net, iye yaba yinto efanelekileyo kwizibonisi zesithuba; Ingatshintsha neglasi ye-quartz njengesixhobo sokuxhasa iityhubhu ze-elektroniki kunye nezixhobo zokwenza iitshiphusi ze-semiconductor.
3. Iiseramikhi zeSiC ezicinezelweyo ezishushu (HP SiC)
Inzuzo ephambili: Ukusila okuhambelanayo phantsi kobushushu obuphezulu kunye noxinzelelo oluphezulu, umgubo ukwimeko ye-thermoplastic, evumela inkqubo yokudluliselwa kobunzima. Ingavelisa iimveliso ezineenkozo ezincinci, uxinano oluphezulu, kunye neempawu ezilungileyo zoomatshini kumaqondo obushushu aphantsi nangexesha elifutshane, kwaye inokufikelela kuxinano olupheleleyo kunye nemeko yokusila ecocekileyo.
Indlela eqhelekileyo yokusetyenziswa: Ekuqaleni yayisetyenziswa njengeevesti ezingangenisi mbumbulu zabasebenzi beenqwelo-moya zase-US ngexesha leMfazwe yaseVietnam, imakethi yezikrweqe yathatyathelwa indawo yi-hot pressed boron carbide; Okwangoku, isetyenziswa kakhulu kwiimeko ezinexabiso eliphezulu, ezifana namasimi aneemfuno eziphezulu kakhulu zokulawula ukwakheka, ubumsulwa, kunye noxinano, kunye namasimi oshishino lwenyukliya angagugiyo.
4. Iiseramikhi zeSiC eziphinde zasetyenziswa (R-SiC)
Inzuzo ephambili: Akukho mfuneko yokongeza izixhobo zokusila, yindlela eqhelekileyo yokulungiselela ubumsulwa obuphezulu kakhulu kunye nezixhobo ezinkulu zeSiC. Le nkqubo ibandakanya ukuxuba iipowder zeSiC ezirhabaxa nezicolekileyo ngokulingana kwaye zenziwe, zisila kwindawo engangeniyo kwi-2200 ~ 2450 ℃. Iiparticles ezincinci ziyaphuma kwaye zijijeke xa kudibene iiparticles ezirhabaxa ukuze zenze i-ceramics, ngobunzima obulandela idayimani kuphela. I-SiC igcina amandla aphezulu obushushu obuphezulu, ukumelana nokugqwala, ukumelana nokuxinana kwe-oxidation, kunye nokumelana nokutshiswa kobushushu.
Izicelo eziqhelekileyo: Ifenitshala ye-oven enobushushu obuphezulu, izitshintshi zobushushu, imilomo yokutsha; Kwiindawo zeenqwelo-moya nezomkhosi, isetyenziselwa ukuvelisa izinto zokwakha izithuthi zasemajukujukwini ezifana neenjini, amaphiko omsila, kunye ne-fuselage, ezinokuphucula ukusebenza kwezixhobo kunye nobomi benkonzo.
5. Iiseramikhi zeSiC ezifakwe kwiSilicon (SiSiC)
Iingenelo eziphambili: Eyona ifanelekileyo kwimveliso yemizi-mveliso, enexesha elifutshane lokusila, ubushushu obuphantsi, ixinene ngokupheleleyo kwaye ayiguquguquki, yenziwe yi-SiC matrix kunye ne-Si phase engenileyo, yahlulwe yangamacandelo amabini: ukungena kolwelo kunye nokungena kwegesi. Le yokugqibela inexabiso eliphezulu kodwa uxinano olungcono kunye nokufana kwe-silicon ekhululekileyo.
Izicelo eziqhelekileyo: ukuvuleka okuphantsi, ukungabi namoya olungileyo, kunye nokumelana okuphantsi ziluncedo ekususeni umbane ongashukumiyo, zilungele ukuvelisa iindawo ezinkulu, ezintsonkothileyo okanye ezingenanto, ezisetyenziswa kakhulu kwizixhobo zokucubungula i-semiconductor; Ngenxa ye-modulus yayo ephezulu, ilula, inamandla aphezulu, kunye nokungabi namoya ogqwesileyo, sisixhobo esikhethwayo esisebenza kakuhle kakhulu kwicandelo leenqwelo-moya, esinokumelana nemithwalo kwindawo yesithuba kwaye siqinisekise ukuchaneka kunye nokhuseleko lwezixhobo.
Ixesha leposi: Sep-02-2025