Nā keramika Silicon carbide (SiC)ua lilo i mea nui i ke kahua o nā keramika kūkulu wela kiʻekiʻe ma muli o ko lākou coefficient hoʻonui wela haʻahaʻa, conductivity wela kiʻekiʻe, paʻakikī kiʻekiʻe, a me ke kūpaʻa wela a me ke kemika maikaʻi loa. Hoʻohana nui ʻia lākou i nā kahua koʻikoʻi e like me ka aerospace, ka ikehu nukelea, ka pūʻali koa, a me nā semiconductors.
Eia nō naʻe, ʻo nā pilina covalent ikaika loa a me ka coefficient diffusion haʻahaʻa o SiC e paʻakikī ai kona densification. No kēia hopena, ua hoʻomohala ka ʻoihana i nā ʻenehana sintering like ʻole, a ʻo nā keramika SiC i hoʻomākaukau ʻia e nā ʻenehana like ʻole he ʻokoʻa koʻikoʻi i ka microstructure, nā waiwai, a me nā hiʻohiʻona noi. Eia kahi loiloi o nā ʻano koʻikoʻi o nā keramika silicon carbide nui ʻelima.
1. Nā keramika SiC sintered ʻole kaomi (S-SiC)
Nā pono koʻikoʻi: Kūpono no nā kaʻina hana hoʻoheheʻe he nui, kumukūʻai haʻahaʻa, ʻaʻole i kaupalena ʻia e ke ʻano a me ka nui, ʻo ia ke ʻano sintering maʻalahi loa e hoʻokō ai i ka hana nui. Ma ka hoʻohui ʻana i ka boron a me ke kalapona i ka β - SiC e loaʻa ana ka nui o ka oxygen a sintering iā ia ma lalo o kahi lewa inert ma kahi o 2000 ℃, hiki ke loaʻa kahi kino sintered me ka density theoretical o 98%. Aia ʻelua mau kaʻina hana: ka pae paʻa a me ka pae wai. ʻOi aku ka nui o ka density a me ka maʻemaʻe o ka mea mua, a me ka conductivity thermal kiʻekiʻe a me ka ikaika wela kiʻekiʻe.
Nā noi maʻamau: Hana nui ʻana o nā apo sila a me nā bearings paheʻe e kūʻē i ke komo ʻana a me ka palaho; Ma muli o kona paʻakikī kiʻekiʻe, ke kaumaha haʻahaʻa, a me ka hana ballistic maikaʻi, hoʻohana nui ʻia ia ma ke ʻano he pale kaua pale pōkā no nā kaʻa a me nā moku, a no ka pale ʻana i nā pahu palekana kīwila a me nā kaʻa lawe kālā. ʻOi aku kona kūpaʻa multi hit ma mua o nā keramika SiC maʻamau, a ʻo ka wahi haki o ka pale kaua pale māmā cylindrical hiki ke piʻi ma mua o 65 tons.
2. Nā keramika SiC sintered pane (RB SiC)
Nā pono koʻikoʻi: Hana mīkini maikaʻi loa, ikaika kiʻekiʻe, kūpaʻa i ka pala, a me ke kūpaʻa i ka oxidation; Haʻahaʻa ka mahana sintering a me ke kumukūʻai, hiki ke hana kokoke i ka nui net. Pili ke kaʻina hana i ka hui ʻana i kahi kumu kalapona me ka pauka SiC e hana i kahi billet. I nā mahana kiʻekiʻe, komo ka silicon heheʻe i loko o ka billet a pane me ke kalapona e hana i ka β - SiC, kahi e hui pū ai me ka α - SiC mua a hoʻopiha i nā pores. He liʻiliʻi ka loli o ka nui i ka wā sintering, e kūpono ai no ka hana ʻoihana o nā huahana ʻano paʻakikī.
Nā noi maʻamau: Nā lako hana umu wela kiʻekiʻe, nā paipu radiant, nā mea hoʻololi wela, nā nozzles desulfurization; Ma muli o kona coefficient hoʻonui wela haʻahaʻa, ka modulus elastic kiʻekiʻe, a me nā ʻano hana kokoke i ka ʻupena, ua lilo ia i mea kūpono no nā mea hoʻomālamalama lewa; Hiki iā ia ke pani i ke aniani quartz ma ke ʻano he mea kākoʻo no nā paipu uila a me nā lako hana hana chip semiconductor.
3. Nā keramika SiC sintered i kaomi wela ʻia (HP SiC)
Pōmaikaʻi koʻikoʻi: ʻO ka sintering synchronous ma lalo o ke kiʻekiʻe o ka mahana a me ke kaomi kiʻekiʻe, aia ka pauka i loko o kahi mokuʻāina thermoplastic, kahi mea e kūpono ai i ke kaʻina hana hoʻoili nuipa. Hiki iā ia ke hana i nā huahana me nā ʻano palaoa maikaʻi, ka nui o ka density, a me nā waiwai mechanical maikaʻi i nā mahana haʻahaʻa a i ka manawa pōkole, a hiki ke hoʻokō i ka nui piha a kokoke i ke kūlana sintering maʻemaʻe.
Ka hoʻohana maʻamau: I hoʻohana mua ʻia ma ke ʻano he mau ʻaʻahu pale pōkā no nā lālā o ka poʻe holo helikopter US i ka wā o ke Kaua Vietnam, ua pani ʻia ka mākeke pale kaua e ka boron carbide i paʻi wela ʻia; I kēia manawa, hoʻohana nui ʻia ia i nā hiʻohiʻona waiwai nui i hoʻohui ʻia, e like me nā kahua me nā koi kiʻekiʻe loa no ka kaohi ʻana i ka haku mele, ka maʻemaʻe, a me ka densification, a me nā kahua ʻoihana pale ʻaʻahu a me nā ʻoihana nuklea.
4. Nā keramika SiC i hoʻopili hou ʻia (R-SiC)
Pōmaikaʻi koʻikoʻi: ʻAʻohe pono e hoʻohui i nā mea kōkua sintering, he ʻano maʻamau ia no ka hoʻomākaukau ʻana i nā mea SiC maʻemaʻe loa a me nā mea nui. ʻO ke kaʻina hana e pili ana i ka hoʻohuihui ʻana i nā pauka SiC coarse a me nā pauka maikaʻi i ka like ʻana a hoʻokumu iā lākou, sintering iā lākou i loko o kahi lewa inert ma 2200 ~ 2450 ℃. Hoʻoheheʻe ʻia nā ʻāpana maikaʻi a hoʻopili ʻia i ka hoʻopili ʻana ma waena o nā ʻāpana coarse e hana i nā keramika, me ka paʻakikī ʻelua wale nō i ka daimana. Mālama ʻo SiC i ka ikaika wela kiʻekiʻe, ke kūpaʻa i ka corrosion, ke kūpaʻa oxidation, a me ke kūpaʻa i ka haʻalulu wela.
Nā noi maʻamau: Nā lako umu wela kiʻekiʻe, nā mea hoʻololi wela, nā nozzles kuni; Ma ke kahua aerospace a me nā pūʻali koa, hoʻohana ʻia e hana i nā ʻāpana hoʻonohonoho mokulele e like me nā mīkini, nā peʻa huelo, a me ka fuselage, hiki ke hoʻomaikaʻi i ka hana o nā lako a me ke ola lawelawe.
5. Nā keramika SiC i hoʻokomo ʻia i loko o ka Silicon (SiSiC)
Nā Pōmaikaʻi Koʻikoʻi: Kūpono loa no ka hana ʻoihana, me ka manawa sintering pōkole, ka mahana haʻahaʻa, piha piha a ʻaʻole i hoʻololi ʻia, i haku ʻia me ka matrix SiC a me ka pae Si i hoʻopili ʻia, i māhele ʻia i ʻelua mau kaʻina hana: ka infiltration wai a me ka infiltration kinoea. ʻOi aku ke kumukūʻai o ka mea hope akā ʻoi aku ka maikaʻi o ka density a me ke ʻano like o ka silicon manuahi.
Nā noi maʻamau: ʻo ka porosity haʻahaʻa, ka ea maikaʻi, a me ke kū'ē haʻahaʻa e kūpono i ka hoʻopau ʻana i ka uila static, kūpono no ka hana ʻana i nā ʻāpana nui, paʻakikī a hollow paha, i hoʻohana nui ʻia i nā lako hana semiconductor; Ma muli o kona modulus elastic kiʻekiʻe, māmā, ikaika kiʻekiʻe, a me ka ea maikaʻi loa, ʻo ia ka mea hana kiʻekiʻe i makemake ʻia ma ke kahua aerospace, hiki ke kū i nā ukana ma nā wahi ākea a hōʻoia i ka pololei a me ka palekana o nā lako.
Ka manawa hoʻouna: Sep-02-2025