- IINGCEBISO ZE-SILICON CARBIDE EBOPHELELEYO
Iimveliso zeReaction Bonded Silicon Carbide (RBSC, okanye iSiSiC) zibonelela ngokuqina/ukuxhathisa ukurhawuzelelwa okugqithisileyo kunye nozinzo olubalaseleyo lweekhemikhali kwiindawo ezinobundlongondlongo. ISilicon Carbide sisixhobo esenziweyo esibonisa iimpawu zokusebenza okuphezulu eziquka:
lUkumelana okugqwesileyo kweekhemikhali.
Amandla e-RBSC aphantse abe ngaphezulu kwama-50% kunalawo ee-carbides ezininzi ze-silicon ezibotshelelweyo ze-nitride. I-RBSC yeyona ceramic ibalaseleyo yokumelana nokugqwala kunye ne-antioxidation. Ingenziwa ibe yi-nozzle ye-desulpurization (FGD).
lUkumelana nokuguguleka okugqwesileyo kunye nempembelelo.
Yiyona nto iphambili kubuchwepheshe be-ceramic obungagugiyo. I-RBSiC inobunzima obuphezulu obufana nobedayimani. Yenzelwe ukusetyenziswa kwizicelo zeemilo ezinkulu apho amanqanaba arhabaxa e-silicon carbide abonisa ukuguguleka okanye umonakalo obangelwa kukuchaphazeleka kweemilo ezinkulu. Ayinakumelana nokuchaphazeleka ngokuthe ngqo kweemilo ezikhanyayo kunye nokuchaphazeleka kunye nokuguguleka okutyibilikayo kwezinto eziqinileyo eziqulethe i-slurry. Inokwenziwa ibe ziintlobo ngeentlobo zeemilo, kuquka iimilo zekhowuni kunye nezemikhono, kunye neziqwenga ezintsonkothileyo ezenziwe ngezixhobo ezibandakanyeka ekucutshungulweni kwezinto eziluhlaza.
lUkumelana kakuhle nobushushu.
Izixhobo ze-silicon carbide ezibotshelelweyo zibonelela ngokumelana okugqwesileyo kobushushu kodwa ngokungafaniyo neeseramikhi zemveli, zikwadibanisa uxinano oluphantsi kunye namandla aphezulu oomatshini.
lAmandla aphezulu (afumana amandla xa kushushu).
I-Silicon carbide ebotshelelwe kwi-reaction igcina uninzi lwamandla ayo oomatshini kumaqondo obushushu aphezulu kwaye ibonisa amanqanaba aphantsi kakhulu okuqhekeka, okwenza ibe lolona khetho lokuqala lokusetyenziswa ekuthwaleni umthwalo kumgama we-1300ºC ukuya kwi-1650ºC (2400ºC ukuya kwi-3000ºF).
- Iphepha leDatha yoBugcisa
| Iphepha ledatha lobuchwephesha | Iyunithi | I-SiSiC (RBSiC) | I-NbSiC | I-ReSiC | I-Sintered SiC |
| I-Reaction Bonded Silicon Carbide | I-Nitride Bonded Silicon Carbide | I-Silicon Carbide ephinde yasetyenziswa | I-Silicon Carbide eSintered | ||
| Unizi lolwapho kuyiwa khona | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
| I-SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| I-Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| I-Porosity evulekileyo | (%) | <0.5 | 10~12 | 15-18 | 7~8 |
| Amandla okugoba | I-Mpa / 20℃ | 250 | 160~180 | 80-100 | 500 |
| I-Mpa / 1200℃ | 280 | 170~180 | 90-110 | 550 | |
| Imodulus yokuqina | I-GPA / 20℃ | 330 | 580 | 300 | 200 |
| I-GPA / 1200℃ | 300 | ~ | ~ | ~ | |
| Ukuqhuba kobushushu | W/(m*k) | 45 (1200℃) | 19.6 (1200℃) | 36.6 (1200℃) | 13.5~14.5 (1000℃) |
| Ukuqina kokwanda kobushushu | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Isikali sobunzima bukaMons (Ubulukhuni) | 9.5 | ~ | ~ | ~ | |
| Ubushushu obusebenza kakhulu | ℃ | 1380 | 1450 | 1620 (i-oxid) | 1300 |
- Ityala leShishiniKwi-Reaction Bonded Silicon Carbide:
Ukuveliswa koMbane, ukuMimba, iiKhemikhali, iiPetrochemical, iiKiln, imboni yokuvelisa oomatshini, iiMineral kunye neMetallurgy njalo njalo.
Nangona kunjalo, ngokungafaniyo neentsimbi kunye nee-alloys zazo, akukho migangatho yokusebenza esemgangathweni kwishishini le-silicon carbide. Ngoluhlu olubanzi lwezinto ezidityanisiweyo, ubuninzi, iindlela zokuvelisa kunye namava enkampani, izinto ze-silicon carbide zinokwahluka kakhulu ngokuhambelana, kunye neempawu zoomatshini kunye neekhemikhali. Ukukhetha kwakho umthengisi kumisela inqanaba kunye nomgangatho wezinto ozifumanayo.