technology

  1. Faa'iidooyinka FICIL addoonsi Silicon CARBIDE

Reaction addoonsi Silicon Carbide (RBSC, ama SiSiC) waxyaabaha bixiyaan ba'an iska caabin engegnaantiinna / abrasion iyo xasiloonida kiimikada aad u fiican in deegaan dagaal. Silicon Carbide waa qalab dardaro in muujinayaa astaamaha waxqabadka sare oo ay ku jiraan:

iska caabin ah kiimiko u fiican.

xoogga RBSC waa ku dhawaad ​​50% ka weyn yahay kii nitride addoonsi ugu carbides Silicon. RBSC waa iska caabin ah daxalka iyo antioxidation dhoobada ugu fiican .. Waxaa la abuuri karaa noocyo kala duwan oo uu biiyaha desulpurization (FGD).

Duugga heer sare iyo saameynta iska caabin ah .

Waa saaray munaaraddii ee abrasion ballaaran technology dhoobada u adkaysta. leeyihiin RBSiC darantahay ingeega, sare u dhowaanin in dheemman. Loogu talagalay in loo isticmaalo codsiyada qaabab badan oo halkaas fasalada madax adkaadeen of carbide Silicon isku Duugga ama dhaawac sugi lahaayeen ka saameyn qayb weyn. Adkaysi u impingement si toos ah uga qayb iftiinka iyo sidoo kale saamaynta iyo abrasion saraysa ee adkaha culus oo ka kooban slurries. Waxaa la abuuri karaa noocyo kala duwan oo qaabab kala, oo ay ku jiraan koorta iyo gacmo qaababka, iyo sidoo kale xabbadood danbeeyay dheeraad ah oo adag oo loogu talagalay qalabka ku lug leh howsha alaabta ceeriin.

Wanaagsan iska caabin ah lama filaan ah kaamerada.

Reaction addoonsi qaybaha carbide Silicon bixiyaan fiican iska caabin ah lama filaan ah kaamerada laakiin ka duwan dhoobada dhaqanka, waxay sidoo kale isu geeyo cufnaanta hooseeyo xoog farsamo sare.

xoog High (guulaha xoog heerkulka).

Reaction addoonsi Silicon carbide xajisto badan oo ay xoog farsamoyaqaanka at heerkulka kacsantahay iyo bandhigaa heer aad u hooseeya ee gurguurta, taas oo ka dhigaysa doorashada hore ee codsiyada load-dhalista ee 1300ºC kala duwan si ay u 1650ºC (2400ºC in 3000ºF).

  1. Technical Data-sheet

Farsamo-xogeeda

Unit

SiSiC (RBSiC)

NbSiC

ReSiC

Sintered SIC

Reaction addoonsi Silicon Carbide

Nitride addoonsi Silicon Carbide

Recrystallized Silicon Carbide

Sintered Silicon Carbide

cufnaanta bulk

(g.cm 3)

≧ 3.02m

2.75-2.85

2,65 ~ 2.75

2.8

SIC

(%)

83,66

≧ 75

≧ 99

90

Si3N4

(%)

0

≧ 23

0

0

Si

(%)

15,65

0

0

9

Porosity Open

(%)

<0.5

10 ~ 12

15-18

7 ~ 8

xoog laabaya

MPA / 20 ℃

250

160 ~ 180

80-100

500

MPA / 1200 ℃

280

170 ~ 180

90-110

550

Modulus of barti

GPA / 20 ℃

330

580

300

200

GPA / 1200 ℃

300

~

~

~

conductivity kaamerada

W / (* k m)

45 (1200 ℃)

19.6 (1200 ℃)

36.6 (1200 ℃)

13.5 ~ 14.5 (1000 ℃)

Confficient ballaarinta kaamerada

K 1 * 10 ˉ6

4.5

4.7

4,69

3

qiyaasta engegnaantiinna Mons (Rigidity)

 

9.5

~

~

~

Max-shaqeeya temparature

1380

1450

1620 (oxid)

1300

  1. Case Industry  Waayo Reaction addoonsi Silicon Carbide:

Power Generation, Macdanta, Kiimikada, kiimikada, dubo, warshadaha wax soo saarka Makiinado, Macdanta & Metallurgy iyo wixii la mid ah.

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Si kastaba ha ahaatee, ka duwan Biraha iyo Alloys ay, ma jiraan shuruudaha waxqabadka warshadaha yoolka ah ee carbide Silicon. Iyada oo tiro balaadhan oo ah darey, degsiimooyin, farsamooyinka wax soo saarka iyo waayo-aragnimo shirkadda, qaybaha carbide Silicon kala duwan karaa si wayn ee joogta ah, iyo sidoo kale guryaha farsamo iyo kiimikada. Doorashadaada qeybiyaha go'aamiso heerka iyo tayada wax aad hesho.


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