Technology

  1. Commoda REACTION BONDED SILICON carbide

Pii carbide Bonded reactionem (RBSC aut SiSiC) products offerre nimiam duriciam / abrasione resistentia et excellens environments incremento chemical status conservari. Pii carbide est synthetica materiale, inter tantam prae se indolem summus perficientur,

optime chemical resistentia.

Est fere L% maior in robore RBSC quam maxime nitride religata continent carbides Silicon. Botrytis cinerea et Sclerotium antioxidation RBSC est optimum pede tellus .. Potest fieri varietate desulpurization in CERVIX (FGD).

optime compensetur labore consumptis Resistentes Superavit impulsum .

Abrasione obsistens tellus magnis est culmen volutpat. Qui non appropinquare RBSiC princeps duritiam et jaspis. Disposito usum in magna effigie applications pro qua Pii carbide grades refractarii sunt, damnum aut exhibens enumerationem lapsum abrasive de magna impulsum posita. Obsistens ad luminis particulas includerent, ut recta impingement gravibus ac impulsum abrasione et illapsum definientia slurries continentur. Potest fieri in variis formis, inter figuram coni sleeve, tum universa multo apparatu disposito machinator pieces involved in processus ex materia cruda.

optime scelerisque inpulsa bellum.

Pii carbide reactionem religata continent components providere excellens scelerisque inpulsa traditional LATERAMEN dissimilis autem resistunt, ipsi quoque mechanica vires iungere humilis density magna.

High viribus (magis redditur fortis ad temperatus).

Pii carbide reactionem religata continent ad mechanica vires continet ad elevatum temperaturis et exhibet multo maxima ex low campester of repunt, facit primum enim onus arbitrium-afferentem range de applications ut 1300ºC 1650ºC (2400ºC ad 3000ºF).

  1. Technical data sheet,

Technical Datasheet

Unit

SiSiC (RBSiC)

NbSiC

ReSiC

Sintered SiC

reactionem Bonded Pii carbide

Nitride Bonded Pii carbide

Recrystallized Pii carbide

Sintered Pii carbide

mole density

(g.cm 3)

≧ 3.02

2.75-2.85

2.65 2.75 ~

2,8

SiC

(%)

83,66

LXXV ≧

XCIX ≧

90

Si3N4

(%)

0

XXIII ≧

0

0

si

(%)

15.65

0

0

9

analogiam et poros aperire

(%)

<0,5

X * XII

15-18

VII ~ VIII

Angiospermae

Mpa / XX ℃

250

CLX CLXXX ~

80-100

500

Mpa / ℃ MCC

280

~ CLXX CLXXX

90-110

550

Secundum modulum elasticitas

Gpa / XX ℃

330

580

300

200

Gpa / ℃ MCC

300

~

~

~

Scelerisque conductivity

W / (m * k)

XLV (MCC ℃)

19.6 (MCC ℃)

36.6 (MCC ℃)

13.5 * 14.5 (M ℃)

Confficient ex scelerisque expansion

K I * X ˉ6

4,5

4.7

4.69

3

Mons super duritia scale (Romans go home!)

 

9,5

~

~

~

Max temparature opus,

1380

1450

MDCXX (bromide)

1300

  1. Causa industria  enim Bonded Pii carbide esse reactionem:

Virtus generatio vestra Mining, Chemical, Petrochemical, Kiln, Machinery manufacturing industria, & Metallurgy Metallis and so on.

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Sed metallis eorum dissimilis alloys sunt non normatum industria perficientur criteria pro Pii carbide. Lato range of compositiones, homogenei vestibulum artes et experientia societatis, Pii carbide components can ASPERITER differunt constantiam, tum artificia et proprietatibus eget. De ordine et qualitate amet voluntas determinat materiam recipiatis.


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