Gukoresha Silicon Carbide Ceramics mumatara yinganda

Gusaba

Silicon carbide ceramicsGukora uruhare runini mubikorwa byo gutanura inganda mumirenge myinshi. Porogaramu y'ibanze ni silicon carbide burner nozzles, ikoreshwa cyane muri sisitemu yo gutwika ubushyuhe bwo hejuru bwo gutunganya ibyuma, gukora ibirahuri, no kurasa ceramic bitewe nuburyo bwimiterere yabyo mubushuhe bukabije. Ubundi buryo bw'ingenzi bukoreshwa ni silikoni ya karibide, ikora nk'inkunga no gutanga ibice mu itanura rihoraho, cyane cyane mu gucumura ibumba ryakozwe neza, ibikoresho bya elegitoroniki, hamwe n'ikirahure cyuzuye. Byongeye kandi, ubukorikori bwa SiC bukoreshwa nkibigize imiterere nkibiti, gariyamoshi, hamwe nugushiraho mu ziko, aho bihanganira kumara igihe kinini bahura nikirere gikaze hamwe nihungabana ryimashini. Kwishyira hamwe kwimyanya yubushyuhe bwa sisitemu yo kugarura imyanda iragaragaza byinshi muburyo bwo gucunga amashyanyarazi. Izi porogaramu zirashimangira silicon karbide ihuza n'imikorere itandukanye ikenewe muburyo bwa tekinoroji yo gushyushya inganda.

Ibyingenzi byingenzi bikoreshwa mu nganda zirimo:

1.Silicon carbide burner nozzles

2.Silicon karbide

3.Silicon carbide beam

4.Silicon karbide irasa

碳化硅辐射管yaolu2

Ibyiza bya tekiniki

1. Ihinduka ridasanzwe ryubushyuhe

- Ingingo yo gushonga: 2,730 ° C (ikomeza ultra-high-temperature ibidukikije)

- Kurwanya Oxidation kugera kuri 1,600 ° C mu kirere (birinda kwangirika kwikirere cya okiside)

 

2. Amashanyarazi meza cyane

- 150 W / (m · K) ubushyuhe bwumuriro mubushyuhe bwicyumba (butuma ubushyuhe bwihuta no gukwirakwiza ubushyuhe bumwe)

- Kugabanya gukoresha ingufu 20-30% ugereranije nibikoresho gakondo bivunika.

 

3. Kurwanya Ubushuhe butagereranywa

- Ihangane ihindagurika ryubushyuhe bwihuse burenga 500 ° C / amasegonda (nibyiza byo gushyushya cycle / gukonjesha).

- Igumana ubunyangamugayo bwubatswe munsi yubushyuhe bwumuriro (birinda gucika no guhindura).

 

4. Imbaraga Zikomeye Zikomeye Mubushyuhe bwo hejuru

- Igumana 90% byimbaraga zubushyuhe bwicyumba kuri 1,400 ° C (ingenzi kubintu bitwara imitwaro).

- Mohs ubukana bwa 9.5 (irwanya kwambara kubikoresho byangiza mu itanura).

Umutungo

Silicon Carbide (SiC)

Alumina (Al₂O₃)

Ibyuma bivunagura (urugero, Ni-ibivanze)

Inganda gakondo (urugero, firebrick)

Icyiza. Ubushyuhe

Kugera kuri 1600 ° C +

1500 ° C.

1200 ° C (yoroshye hejuru)

1400–1600 ° C (biratandukanye)

Amashanyarazi

Hejuru (120–200 W / m · K)

Hasi (~ 30 W / m · K)

Guciriritse (~ 15–50 W / m · K)

Hasi cyane (<2 W / m · K)

Kurwanya Ubushyuhe

Cyiza

Abakene Kugereranya

Guciriritse (ductility ifasha)

Abakene (ibice munsi yihuta ΔT)

Imbaraga za mashini

Igumana imbaraga ku bushyuhe bwinshi

Impamyabumenyi iri hejuru ya 1200 ° C.

Intege nke ku bushyuhe bwinshi

Hasi (yoroheje, yoroheje)

Kurwanya ruswa

Irwanya acide, alkalis, ibyuma bishongeshejwe / slag

Guciriritse (yibasiwe na acide / base)

Gukunda okiside / sulfidation kuri temps nyinshi

Gutesha agaciro ikirere cyangirika

Ubuzima

Murebure (kwambara / okiside-irwanya)

Guciriritse (gucamo munsi yumukino wamagare)

Mugufi (oxyde / creeps)

Mugufi (gutemba, isuri)

Ingufu

Hejuru (ubushyuhe bwihuse)

Hasi (ubushyuhe buke bwumuriro)

Ugereranije (uyobora ariko uhindura)

Hasi cyane (insulative)

Urubanza

Uruganda rukomeye rutunganya ibyuma bya metallurgiki rwageze ku iterambere ryibikorwa nyuma yo kwinjiza ubukorikori bwa silicon karbide (SiC) muri sisitemu yubushyuhe bwo hejuru. Mugusimbuza ibisanzwe bya alumina hamwesilicon carbide burner nozzles, ikigo cyatangaje:

✅ 40% yo hasi yumwaka wo kubungabunga bitewe no kugabanuka kw ibice muri 1500 ° C + ibidukikije.

Increase Kwiyongera 20% mugihe cyo gukora, biterwa na SiC yo kurwanya ubushyuhe bwumuriro no kwangirika bivuye kumashanyarazi.

Guhuza na ISO 50001 ibipimo ngenderwaho byo gucunga ingufu, gukoresha ingufu za SiC nyinshi kugirango zongere ingufu za peteroli 15-20%.

(5)碳化硅辐射管 保护管


Igihe cyo kohereza: Werurwe-21-2025
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