- IBYIZA BYO GUFATA IKARIDI YA SILICON IFITE AGAKORESHO
Ibicuruzwa bya Silicon Carbide (RBSC, cyangwa SiSiC) bitanga ubushobozi bwo kurwanya ubukana/uburibwe bukabije ndetse no kudahungabana mu buryo butangaje mu bidukikije. Silicon Carbide ni ibikoresho by’ubukorikori bigaragaza imikorere myiza irimo:
lUbudahangarwa bwiza cyane bw'imiti.
Imbaraga za RBSC ziruta hafi 50% iz’inyinshi muri karubide za silikoni ziboheshejwe na nitride. RBSC ni ceramic nziza cyane irwanya ingese kandi irwanya ogisijeni. Ishobora gukorwamo ubwoko butandukanye bwa desulpurization nozzle (FGD).
lUbudahangarwa bwiza bwo kwangirika no guhangana n'ingaruka.
Ni urwego rw'ikirenga mu ikoranabuhanga rinini rya ceramic rirwanya kwangirika. RBSiC ifite ubukana bwinshi bugera kuri diyama. Yagenewe gukoreshwa mu miterere minini aho imiterere ya silicon carbide idashobora kwangirika cyangwa kwangirika bitewe n'ingaruka z'uduce duto. Irwanya kwangirika kw'uduce tw'urumuri kimwe n'ingaruka no kwangirika kw'ibintu bikomeye birimo slurry. Ishobora gukorwamo imiterere itandukanye, harimo imiterere ya cone n'amaboko, ndetse n'ibice bigoye cyane byakozwe mu bikoresho bikora mu gutunganya ibikoresho fatizo.
lUbudahangarwa bwiza cyane n'ubushyuhe.
Ibice bya silikoni bifatanye na reaction bitanga ubudahangarwa bukomeye bw'ubushyuhe ariko bitandukanye na ceramic zisanzwe, binahuza ubucucike buke n'imbaraga nyinshi za mekanike.
lIngufu nyinshi (irushaho gukomera mu bushyuhe).
Karubide ya Silicon ifatanyijwe n'ingufu zayo nyinshi mu bushyuhe buri hejuru kandi ikagira urugero rwo hasi cyane rwo gucikamo ibice, bigatuma iba amahitamo ya mbere yo gukoreshwa mu gutwara imizigo hagati ya 1300ºC na 1650ºC (2400ºC na 3000ºF).
- Urupapuro rw'amakuru ya tekiniki
| Urupapuro rw'amakuru ya tekiniki | Ishami | SiSiC (RBSiC) | NbSiC | ReSiC | SiC ya Sintered |
| Karubide ya Silicon Ifatanye na Reaction | Karubide ya Silicon ifatanye na Nitride | Karubide ya Silicon yongeye gukoreshwa | Karubide ya Silikoni Ikozwe mu Gikoresho | ||
| Ubucucike bw'umubyimba | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
| SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Imboro ifunguye | (%) | <0.5 | 10~12 | 15-18 | 7-8 |
| Imbaraga zo kunama | Mpa / 20℃ | 250 | 160~180 | 80-100 | 500 |
| Mpa / 1200℃ | 280 | 170~180 | 90-110 | 550 | |
| Modulus y'ubudahangarwa | Gpa / 20℃ | 330 | 580 | 300 | 200 |
| Gpa / 1200℃ | 300 | ~ | ~ | ~ | |
| Ubushobozi bwo gutwara ubushyuhe | W/(m*k) | 45 (1200℃) | 19.6 (1200℃) | 36.6 (1200℃) | 13.5~14.5 (1000℃) |
| Bifite icyizere cy'uko ubushyuhe bwakwirakwira | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Igipimo cy'ubukana bwa Mons (Uburimbane) | 9.5 | ~ | ~ | ~ | |
| Ubushyuhe bukabije bwo gukora | ℃ | 1380 | 1450 | 1620 (okiside) | 1300 |
- Urubanza rw'ingandaKu bijyanye na Silicon Carbide ifatanye na Reaction:
Ingufu zikomoka ku bucukuzi bw'amabuye y'agaciro, ubucukuzi bw'amabuye y'agaciro, ubutabire, peteroli, ifuru, inganda zikora imashini, amabuye y'agaciro n'ubucukuzi bw'ibyuma n'ibindi.
Ariko, bitandukanye n'ibyuma n'ibyuma byabyo, nta bipimo ngenderwaho by'imikorere y'inganda za silicon carbide. Hamwe n'ubwoko bwinshi bw'ibinyabutabire, ubucucike, ubuhanga bwo gukora ndetse n'uburambe bw'ikigo, ibice bya silicon carbide bishobora gutandukana cyane mu buryo buhamye, ndetse no mu miterere ya mekanike na shimi. Guhitamo umucuruzi ni byo bigena urwego n'ubwiza bw'ibikoresho uhabwa.