- IZINZUZO ZOKUSABELA OKUBOPHELELE KWE-SILICON CARBIDE
Imikhiqizo ye-Reaction Bonded Silicon Carbide (RBSC, noma i-SiSiC) inikeza ukumelana nokuqina/ukuguguleka okukhulu kanye nokuqina kwamakhemikhali okuvelele ezindaweni ezinolaka. I-Silicon Carbide iyinto yokwenziwa ekhombisa izici zokusebenza okuphezulu okuhlanganisa:
lUkumelana okuhle kakhulu kwamakhemikhali.
Amandla e-RBSC cishe angama-50% kunalawo amaningi ama-silicon carbides aboshwe yi-nitride. I-RBSC iyindlela enhle kakhulu yokumelana nokugqwala kanye ne-antioxidation ceramic. Ingakhiwa ibe uhlobo lwe-desulpurization nozzle (FGD).
lUkumelana okuhle kakhulu nokuguguleka.
Iwuphawu lobuchwepheshe obukhulu be-ceramic obumelana nokuguguleka. I-RBSiC inobunzima obuphezulu obufana nobedayimane. Yakhelwe ukusetshenziswa ezinhlotsheni ezinkulu lapho amazinga okuguguleka e-silicon carbide ebonisa ukuguguleka noma umonakalo ovela ekushayweni yizinhlayiya ezinkulu. Imelana nokuvinjelwa okuqondile kwezinhlayiya ezikhanyayo kanye nokuthinteka kanye nokuguguleka okushelelayo kwezinto eziqinile eziqukethe ama-slurry. Ingakhiwa ibe yizinhlobo ezahlukahlukene, kufaka phakathi izimo zekhoni kanye nezesiketi, kanye nezingcezu eziyinkimbinkimbi kakhulu eziklanywe ngemishini ehilelekile ekucutshungulweni kwezinto zokusetshenziswa.
lUkumelana okuhle kakhulu nokushaqeka kokushisa.
Izingxenye ze-silicon carbide eziboshiwe eziphendulayo zinikeza ukumelana okuhle kakhulu kokushaqeka kokushisa kodwa ngokungafani ne-ceramics yendabuko, ziphinde zihlanganise ukuminyana okuphansi namandla aphezulu omshini.
lAmandla aphezulu (athola amandla ekushiseni).
I-Silicon carbide eboshiwe ephendulayo igcina iningi lamandla ayo okusebenza emazingeni okushisa aphezulu futhi ibonisa amazinga aphansi kakhulu okukhukhuleka, okwenza kube ukukhetha kokuqala kokusetshenziswa kokuthwala umthwalo ebangeni eliphakathi kuka-1300ºC no-1650ºC (2400ºC kuya ku-3000ºF).
- Ishidi Ledatha Lobuchwepheshe
| Ishidi Ledatha Lobuchwepheshe | Iyunithi | I-SiSiC (RBSiC) | I-NbSiC | I-ReSiC | I-Sintered SiC |
| I-Reaction Bonded Silicon Carbide | I-Nitride Bonded Silicon Carbide | I-Silicon Carbide Ephinde Yasetshenziswa | I-Silicon Carbide Ehlanganisiwe | ||
| Ubuningi obukhulu | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
| I-SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| I-Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Vula i-Porosity | (%) | <0.5 | 10~12 | 15-18 | 7~8 |
| Amandla okugoba | I-Mpa / 20℃ | 250 | 160~180 | 80-100 | 500 |
| I-Mpa / 1200℃ | 280 | 170~180 | 90-110 | 550 | |
| I-Modulus yokuqina | I-Gpa / 20℃ | 330 | 580 | 300 | 200 |
| I-GPA / 1200℃ | 300 | ~ | ~ | ~ | |
| Ukuqhuba kwe-thermal | W/(m*k) | 45 (1200℃) | 19.6 (1200℃) | 36.6 (1200℃) | 13.5~14.5 (1000℃) |
| Ukuqina kokukhula kokushisa | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Isikali sobulukhuni bukaMons (Ukuqina) | 9.5 | ~ | ~ | ~ | |
| Izinga lokushisa elisebenza kakhulu | ℃ | 1380 | 1450 | 1620 (i-oxid) | 1300 |
- Icala LemboniUkuze uthole i-Reaction Bonded Silicon Carbide:
Ukukhiqizwa Kwamandla, Ukumbiwa Kwezimayini, Amakhemikhali, Amakhemikhali Kaphethroli, Ikhishi, Imboni Yokukhiqiza Imishini, Amaminerali kanye Nensimbi njalo njalo.
Kodwa-ke, ngokungafani nezinsimbi kanye nama-alloy azo, azikho izindlela zokusebenza embonini ezijwayelekile ze-silicon carbide. Ngobubanzi bezinto ezihlanganisiwe, ubuningi, amasu okukhiqiza kanye nolwazi lwenkampani, izingxenye ze-silicon carbide zingahluka kakhulu ngokuhambisana, kanye nezakhiwo zemishini kanye namakhemikhali. Ukukhetha kwakho umhlinzeki kunquma izinga kanye nekhwalithi yezinto ozitholayo.