Tekinoroji

1. ZVAKANAKA ZVESILICON CARBIDE YAKABATANIDZWA

Zvigadzirwa zveReaction Bonded Silicon Carbide (RBSC, kana SiSiC) zvinopa simba rakasimba/kusagadzikana uye kugadzikana kwemakemikari munzvimbo dzine hukasha. Silicon Carbide chinhu chakagadzirwa chinoratidza hunhu hwepamusoro hunosanganisira:

lKudzivirira makemikari zvakanaka.

Simba reRBSC rakakura ne50% kupfuura remazhinji masilicon carbides ane nitride bonded. RBSC iceramic inodzivirira ngura uye antioxidation. Inogona kugadzirwa kuita mhando dzakasiyana dze desulpurization nozzle (FGD).

lKupfeka kwakanaka uye kuramba kukanganiswa.

Ndiyo yepamusoro-soro yetekinoroji yeceramic inodzivirira kukweshana kukuru. RBSiC ine kuomarara kwakanyanya kwakafanana nedhaimani. Yakagadzirirwa kushandiswa muzvishandiso zvemaumbirwo makuru apo magiredhi esilicon carbide asingadzoreki ari kuratidza kupera simba kana kukuvara nekuda kwekukweshana kwezvikamu zvikuru. Inodzivirira kukanganiswa zvakananga kwezvikamu zvishoma pamwe nekukweshana uye kukweshana kwezvikamu zvinorema zvine slurry. Inogona kugadzirwa kuita maumbirwo akasiyana-siyana, kusanganisira maumbirwo ekoni nemaoko, pamwe nezvidimbu zvakaoma zvakagadzirwa zvemidziyo inoshandiswa mukugadzirisa zvinhu zvakagadzirwa.

lKudzivirira kupisa kwakanyanya.

Zvikamu zvesilicon carbide zvinobatanidzwa nereaction zvinopa simba guru rekudzivirira kupisa asi kusiyana neceramics dzechinyakare, zvinosanganisawo density yakaderera nesimba remuchina rakawanda.

lSimba guru (rinowedzera simba pakupisa).

Silicon carbide ine reaction bonded inoramba iine simba rayo remakanika pakupisa kwakanyanya uye ine mwero wakaderera wekukwira, zvichiita kuti ive sarudzo yekutanga yekushandiswa mukutakura mutoro uri pakati pe1300ºC kusvika 1650ºC (2400ºC kusvika 3000ºF).

1. Pepa reruzivo rwehunyanzvi

Pepa reData reUnyanzvi	Chikamu	SiSiC (RBSiC)	NbSiC	ReSiC	SiC yakacheneswa
		Maitiro Akabatana neSilicon Carbide	Nitride yakabatana neSilicon Carbide	Silicon Carbide yakagadzirwazve	Sintered nesilicon carbide
Kuwanda kwehuwandu	(g.cm3)	≧ 3.02	2.75-2.85	2.65~2.75	2.8
SiC	(%)	83.66	≧ 75	≧ 99	90
Si3N4	(%)	0	≧ 23	0	0
Si	(%)	15.65	0	0	9
Vhura Porosity	(%)	<0.5	10~12	15-18	7~8
Simba rekukotama	Mpa / 20℃	250	160~180	80-100	500
	Mpa / 1200℃	280	170~180	90-110	550
Modulus yekusimba	Gpa / 20℃	330	580	300	200
	GPA / 1200℃	300	~	~	~
Kufambisa kwekupisa	W/(m*k)	45 (1200℃)	19.6 (1200℃)	36.6 (1200℃)	13.5~14.5 (1000℃)
Kunyatsovandudzika kwekupisa	Kˉ1 * 10ˉ6	4.5	4.7	4.69	3
Chikero chekuomarara kweMons (Kuomarara)		9.5	~	~	~
Tembiricha inoshanda zvakanyanya	℃	1380	1450	1620 (okisijeni)	1300

1. Nyaya yeIndasitiriYekugadzirisa Silicon Carbide Yakasungwa:

Kugadzira Magetsi, Kuchera Migodhi, Kemikari, Petrokemikari, Kirini, Indasitiri yekugadzira michina, Zvicherwa & Metallurgy nezvimwewo.