- NGĀ PAINGA O TE KAPIHI HIRIKONI HONONGA Ā-TAURANGA
Ko ngā hua Reaction Bonded Silicon Carbide (RBSC, SiSiC rānei) e tuku ana i te ātete tino pakari/aukati me te pumau matū tino pai i roto i ngā taiao kaha. He rauemi hangai te Silicon Carbide e whakaatu ana i ngā āhuatanga mahi teitei tae atu ki:
lHe ātete matū tino pai.
Ko te kaha o te RBSC e tata ana ki te 50% te nui ake i te nuinga o ngā warowaihā silicon e honoa ana ki te nitride. He tino pai te ātete o te RBSC ki te waikura me te ārai waikura. Ka taea te hanga hei momo pūwero desulpurization (FGD).
lHe tino pai te ātete ki te mau me te pānga.
Koinei te tihi o te hangarau uku ātete ki te pakū nui. He tino pakari te RBSiC, tata ki te taimana. I hangaia hei whakamahi i roto i ngā tono mō ngā āhua nui kei reira ngā taumata ātete o te silicon carbide e whakaatu ana i te kakahu pakū, te kino rānei mai i te pānga o ngā matūriki nui. Ātete ki te pānga tika o ngā matūriki māmā me te pānga me te paheke o te pakū o ngā totoka taumaha kei roto he paru. Ka taea te hanga ki ngā momo āhua, tae atu ki ngā āhua kōne me te ringaringa, tae atu ki ngā wahi hangarau uaua ake i hangaia mō ngā taputapu e uru ana ki te tukatuka rauemi mata.
lHe ātete pai rawa atu ki ngā ru wera.
He tino pai te ātete o ngā wāhanga silicon carbide e honoa ana ki te tauhohenga ki ngā ru wera, engari he rerekē ki ngā uku tuku iho, he iti te mātotoru me te kaha ā-ringa teitei hoki e honoa ana e rātou.
lKaha teitei (ka piki ake te kaha i te pāmahana).
Ka mau tonu te nuinga o te kaha ā-pūkaha o te silicon carbide e honoa ana ki te tauhohenga i ngā pāmahana teitei, ā, he iti rawa te taumata o te ngokingoki, koia te kōwhiringa tuatahi mō ngā tono kawe kawenga i waenga i te 1300ºC ki te 1650ºC (2400ºC ki te 3000ºF).
- Pepa Raraunga Hangarau
| Pepa Raraunga Hangarau | Wāhanga | SiSiC (RBSiC) | NbSiC | ReSiC | SiC kua whakatōngia |
| Karāpire Hiraka Hononga Tauhohenga | Nitride Silicon Carbide Herea | Karāpire Hiraka Whakakāhoretia | Karāpire Hiraka Kua Whakatōngia | ||
| Kīanga papatipu | (g.cm3) | ≧ 3.02 | 2.75-2.85 | 2.65~2.75 | 2.8 |
| SiC | (%) | 83.66 | ≧ 75 | ≧ 99 | 90 |
| Si3N4 | (%) | 0 | ≧ 23 | 0 | 0 |
| Si | (%) | 15.65 | 0 | 0 | 9 |
| Pūwero Tuwhera | (%) | <0.5 | 10~12 | 15-18 | 7~8 |
| Te kaha piko | Mpa / 20℃ | 250 | 160~180 | 80-100 | 500 |
| Mpa / 1200℃ | 280 | 170~180 | 90-110 | 550 | |
| Te tauwehenga o te ngāwari | GPA / 20℃ | 330 | 580 | 300 | 200 |
| GPA / 1200℃ | 300 | ~ | ~ | ~ | |
| Te kawe wera | W/(m*k) | 45 (1200℃) | 19.6 (1200℃) | 36.6 (1200℃) | 13.5~14.5 (1000℃) |
| He māia ki te whakawhānui wera | Kˉ1 * 10ˉ6 | 4.5 | 4.7 | 4.69 | 3 |
| Tauine mārō a Mons (Pūkeke) | 9.5 | ~ | ~ | ~ | |
| Te pāmahana mahi mōrahi | ℃ | 1380 | 1450 | 1620 (waikura) | 1300 |
- Take AhumahiMō te Carbide Silicon Herea Tauhohenga:
Te Whakaputa Hiko, te Keri, te Matū, te Petrochemical, te Oil, te ahumahi hanga mīhini, te Kohuke me te Whakarewa me ērā atu.
Heoi, kāore i rite ki ngā konganuku me ō rātou koranu, kāore he paearu mahi ahumahi paerewa mō te silicon carbide. Nā te whānuitanga o ngā hanganga, ngā mātotorutanga, ngā tikanga hanga me te wheako o te kamupene, ka rerekē rawa te ōritetanga o ngā wāhanga silicon carbide, tae atu ki ngā āhuatanga miihini me te matū. Ko tāu whiriwhiri kaiwhakarato e whakatau ana i te taumata me te kounga o te rauemi ka riro i a koe.