ʻenehana

1. Nā Pōmaikaʻi o ka Reaction Bonded Silicon Carbide

Hāʻawi nā huahana Reaction Bonded Silicon Carbide (RBSC, a i ʻole SiSiC) i ke kūpaʻa paʻakikī/abrasion koʻikoʻi a me ke kūpaʻa kemika koʻikoʻi i nā wahi hoʻouka kaua. He mea synthetic ʻo Silicon Carbide e hōʻike ana i nā ʻano hana kiʻekiʻe e like me:

lKe kūpaʻa kemika maikaʻi loa.

ʻO ka ikaika o RBSC he aneane 50% ʻoi aku ka nui ma mua o ka hapa nui o nā carbides silicon i hoʻopaʻa ʻia me ka nitride. ʻO RBSC ka pale maikaʻi loa i ka pala a me ka antioxidation ceramic. Hiki ke hoʻokumu ʻia i loko o nā ʻano nozzle desulpurization (FGD).

lʻO ke kūpaʻa maikaʻi loa a me ka hopena.

ʻO ia ka piko o ka ʻenehana keramika kū i ka abrasion nui. Loaʻa i ka RBSiC ka paʻakikī kiʻekiʻe e like me ke daimana. Hoʻolālā ʻia no ka hoʻohana ʻana i nā noi no nā ʻano nui kahi e hōʻike ai nā papa refractory o ka silicon carbide i ka ʻaʻahu abrasive a i ʻole ka hōʻino ʻia mai ka hopena o nā ʻāpana nui. Kūpaʻa i ka hoʻopili pololei ʻana o nā ʻāpana māmā a me ka hopena a me ka abrasion paheʻe o nā mea paʻa kaumaha i loaʻa nā slurries. Hiki ke hoʻokumu ʻia i nā ʻano like ʻole, me nā ʻano cone a me nā lima lima, a me nā ʻāpana ʻenekinia paʻakikī i hoʻolālā ʻia no nā lako e pili ana i ka hana ʻana i nā mea maka.

lKe kūpaʻa haʻalulu wela maikaʻi loa.

Hāʻawi nā ʻāpana silicon carbide i hoʻopaʻa ʻia i ka hopena i ke kūpaʻa haʻalulu wela maikaʻi loa akā ʻaʻole e like me nā keramika kuʻuna, hoʻohui pū lākou i ka haʻahaʻa haʻahaʻa me ka ikaika mechanical kiʻekiʻe.

lIkaika kiʻekiʻe (loaʻa ka ikaika i ka mahana).

Mālama ka Silicon carbide i hoʻopaʻa ʻia i ka hopena i ka hapa nui o kona ikaika mechanical i nā mahana kiʻekiʻe a hōʻike i nā pae haʻahaʻa loa o ka kolo ʻana, ʻo ia ke koho mua no nā noi lawe ukana ma ka pae 1300ºC a i 1650ºC (2400ºC a i 3000ºF).

1. Pepa ʻIkepili ʻenehana

Pepa ʻIkepili ʻenehana	ʻĀpana	ʻO SiSiC (RBSiC)	NbSiC	ReSiC	SiC i hoʻopaʻa ʻia
		ʻO ka Silicon Carbide i hoʻopaʻa ʻia	ʻO ka Nitride Bonded Silicon Carbide	ʻO ka Silicon Carbide i hoʻopili hou ʻia	ʻO ka Carbide Silicon Sintered
Ka nui o ka nui	(g.cm)3)	≧ 3.02	2.75-2.85	2.65~2.75	2.8
SiC	(%)	83.66	≧ 75	≧ 99	90
Si3N4	(%)	0	≧ 23	0	0
Si	(%)	15.65	0	0	9
Ka Porosity Hāmama	(%)	<0.5	10~12	15-18	7~8
Ikaika kūlou	Mpa / 20℃	250	160~180	80-100	500
	Mpa / 1200℃	280	170~180	90-110	550
Modulus o ka elasticity	Gpa / 20℃	330	580	300	200
	Gpa / 1200℃	300	~	~	~
Ka hoʻokele wela	W/(m*k)	45 (1200℃)	19.6 (1200℃)	36.6 (1200℃)	13.5~14.5 (1000℃)
Hilinaʻi i ka hoʻonui wela	Kˉ1 * 106	4.5	4.7	4.69	3
Ka unahi paʻakikī o Mons (Rigidity)		9.5	~	~	~
Ka mahana hana kiʻekiʻe loa	℃	1380	1450	1620 (ʻokikene)	1300

1. Hihia ʻoihanaNo ka Silicon Carbide i hoʻopaʻa ʻia:

Hana Mana, Mining, Chemicals, Petrochemical, Kiln, ʻoihana hana mīkini, Minerals & Metallurgy a pēlā aku.