I-Silicon Carbide inokumelana okuhle kakhulu nokugqwala, amandla aphezulu okusebenza, ukuhanjiswa okuphezulu kokushisa, i-coefficient ephansi kakhulu yokwanda kokushisa, kanye nokumelana okungcono kokushaqeka kokushisa kune-alumincell ebizwa ngokuthi amazinga okushisa aphezulu kakhulu. I-Silicon carbide yakhiwe yi-tetrahedra yama-athomu e-carbon ne-silicon anezibopho eziqinile ku-crystal lattice. Lokhu kukhiqiza izinto eziqinile kakhulu neziqinile. I-Silicon carbide ayihlaselwa yinoma yimaphi ama-acid noma ama-alkali noma usawoti oncibilikisiwe ofinyelela ku-800ºC. Emoyeni, i-SiC yakha ungqimba lwe-silicon oxide oluvikelayo ku-1200ºC futhi iyakwazi ukusetshenziswa ofinyelela ku-1600ºC. Ukuhanjiswa okuphezulu kokushisa okuhambisana nokwanda okuphansi kokushisa kanye namandla aphezulu kunikeza le nto izimfanelo ezingavamile zokumelana nokushaqeka kokushisa. I-Silicon carbide ceramics enokungcola okuncane noma okungenawo umngcele wokusanhlamvu igcina amandla ayo okushisa aphezulu kakhulu, isondela ku-1600ºC ngaphandle kokulahlekelwa amandla. Ubumsulwa bamakhemikhali, ukumelana nokuhlaselwa kwamakhemikhali ekushiseni, kanye nokugcinwa kwamandla emazingeni okushisa aphezulu kwenze le nto yathandwa kakhulu njenge-wafer tray esekelayo kanye nama-paddles ezithandweni ze-semiconductor. Ukuqhutshwa kwe-Thcell nameelectrical kwezinto kuholele ekusetshenzisweni kwayo ezintweni zokushisa ezimelana nezitofu zikagesi, kanye nanjengengxenye ebalulekile kuma-thermistors (ama-resistors aguquguqukayo okushisa) kanye naku-varistors (ama-resistors aguquguqukayo okushisa). Ezinye izinhlelo zokusebenza zifaka ubuso bokuvala, amapuleti okuguguleka, ama-bearings kanye namashubhu e-liner.
Isikhathi sokuthunyelwe: Juni-05-2018
