I-Silicon Carbide inokumelana okuhle kakhulu nokugqwala, amandla aphezulu oomatshini, ukuqhuba okuphezulu kobushushu, i-coefficient ephantsi kakhulu yokwanda kobushushu, kunye nokumelana okungcono kobushushu kune-alumincell ebizwa ngokuba ngamaqondo obushushu aphezulu kakhulu. I-Silicon carbide yenziwe yi-tetrahedra yee-athomu zekhabhoni kunye ne-silicon ezineebhondi eziqinileyo kwi-crystal lattice. Oku kuvelisa izinto eziqinileyo neziqinileyo. I-Silicon carbide ayihlaselwa zi-acids okanye ii-alkalis okanye iityuwa ezinyibilikisiweyo ukuya kuthi ga kwi-800ºC. Emoyeni, i-SiC yenza i-silicon oxide coating ekhuselayo kwi-1200ºC kwaye iyakwazi ukusetyenziswa ukuya kuthi ga kwi-1600ºC. Ukuhamba okuphezulu kobushushu kunye nokwandiswa okuphantsi kobushushu kunye namandla aphezulu kunika le nto iimpawu ezibalaseleyo zokumelana nobushushu. Iiceramics ze-silicon carbide ezinokungcola okuncinci okanye okungekhoyo komda wengqolowa zigcina amandla azo ukuya kuthi ga kubushushu obuphezulu kakhulu, zisondela kwi-1600ºC ngaphandle kokulahleka kwamandla. Ubumsulwa beekhemikhali, ukumelana nokuhlaselwa ziikhemikhali kubushushu, kunye nokugcinwa kwamandla kubushushu obuphezulu kwenze le nto yathandwa kakhulu njenge-wafer tray exhasa kunye nee-paddles kwii-oven ze-semiconductor. Ukuhanjiswa kwezixhobo ze-Thcell namelectrical kukhokelele ekusetyenzisweni kwazo kwizinto zokufudumeza ezichaseneyo kwii-oven zombane, kwaye njengenxalenye ephambili kwii-thermistors (ii-resistors eziguquguqukayo zobushushu) nakwii-varistors (ii-resistors eziguquguqukayo zombane). Ezinye izicelo ziquka ubuso be-seal, iipleyiti zokuguguleka, iibheringi kunye neetyhubhu ze-liner.
Ixesha leposi: Juni-05-2018