Ku bijyanye na Silicon Carbide na SiC ceramics

Silicon Carbide ifite ubushobozi bwo kurwanya ingese, imbaraga nyinshi za mekanike, ubushobozi bwinshi bwo gutwara ubushyuhe, ubushobozi buke cyane bwo kwaguka k'ubushyuhe, kandi ifite ubushobozi bwo kurwanya ubushyuhe kurusha aluminiyumu ifite ubushyuhe bwinshi cyane. Silicon Carbide igizwe na tetrahedra ya atome za karuboni na siliconi zifite imigozi ikomeye mu gitereko cya kristu. Ibi bitanga ibikoresho bikomeye kandi bikomeye. Silicon Carbide ntiterwa na aside cyangwa alkali cyangwa umunyu washongeshejwe kugeza kuri 800ºC. Mu kirere, SiC ikora umwambaro wa silicon oxide urinda kuri 1200ºC kandi ishobora gukoreshwa kugeza kuri 1600ºC. Uburyo ikirere gishyushye cyane hamwe n'ubushyuhe buke n'imbaraga nyinshi biha iyi mashini ubushobozi budasanzwe bwo kurwanya ubushyuhe. Silicon carbide ceramics ifite umwanda muto cyangwa nta n'umwe ugabanya ubushyuhe ikomeza gukomera kugeza ku bushyuhe bwinshi cyane, igera kuri 1600ºC nta gutakaza imbaraga. Ubuziranenge bwa shimi, kurwanya ibitero bya shimi ku bushyuhe, no kugumana imbaraga ku bushyuhe bwinshi byatumye iyi mashini ikunzwe cyane nk'imashini zishyigikira kandi zigapfunyika mu itanura rya semiconductor. Uburyo bwo kohereza ibikoresho hakoreshejwe amashanyarazi bwatumye bikoreshwa mu bikoresho bishyushya umuriro mu itanura ry'amashanyarazi, ndetse no mu bikoresho by'ingenzi mu bikoresho bishyushya umuriro (ibipimo by'ubushyuhe) no muri varistors (ibipimo by'ubushyuhe). Izindi porogaramu zirimo isura zifunga, ibyuma biramba, ibyuma bitwara umuriro n'imiyoboro y'amazi.