Ukumelana nokugqwala kwe-R-SiC kunye ne-Si3N4-SiC kwi-Aluminium-silicon Alloy Melt

I-silicon carbide kunye ne-silicon nitride azimanzi kakuhle xa zifakwe kwisinyithi esinyibilikisiweyo. Ngaphandle kokuba zingene kwi-magnesium, nickel, chromium alloy kunye nentsimbi engatyiwayo, azimanzi kwezinye iintsimbi, ngoko ke zinokumelana okuhle nokugqwala kwaye zisetyenziswa kakhulu kwishishini le-aluminium electrolysis.

Kule phepha, ukuxhathisa kokugqwala kwe-recrystallized silicon carbide R-SiC kunye ne-silicon nitride bonded silicon carbide Si3N4-SiC kwi-hot-circulating alloy melts ye-Al-Si kuphandwe kwiilatitude ezininzi.

Ngokwedatha yovavanyo lwexesha eli-9 lokujikeleza kobushushu be-1080h kwi-495 ° C ~ 620 ° C i-aluminium-silicon alloy melt, iziphumo zohlalutyo ezilandelayo zifunyenwe.

Iisampulu ze-R-SiC kunye ne-Si3N4-SiC zanda ngokuhamba kwexesha lokugqwala kwaye izinga lokugqwala lehla. Izinga lokugqwala lihambelana nobudlelwane be-logarithmic bokunciphisa. (umfanekiso 1)

Ngokuhlalutya i-energy spectrum, iisampulu ze-R-SiC kunye ne-Si3N4-SiC ngokwazo azinazo i-aluminium-silicon; kwipateni ye-XRD, inani elithile le-aluminium-silicon peak yi-surface-residual aluminium-silicon alloy. (Umfanekiso 2 – Umfanekiso 5)

Ngokusebenzisa uhlalutyo lwe-SEM, njengoko ixesha lokugqwala lisanda, ulwakhiwo lulonke lweesampuli ze-R-SiC kunye ne-Si3N4-SiC luyakhululeka, kodwa akukho monakalo ucacileyo. (Umfanekiso 6 – Umfanekiso 7)

Uxinzelelo lomphezulu σs/l>σs/g lwe-interface phakathi kolwelo lwe-aluminiyam kunye ne-ceramic, i-engile yokumanzisa θ phakathi kwe-interfaces yi >90°, kwaye i-interface phakathi kolwelo lwe-aluminiyam kunye nezinto ze-ceramic zeshiti ayimanzi.

Ngoko ke, izinto ze-R-SiC kunye ne-Si3N4-SiC zibalaseleyo ekuchaseni ukugqwala ngokuchasene ne-aluminium silicon melt kwaye azinamahluko mkhulu. Nangona kunjalo, ixabiso lezinto ze-Si3N4-SiC liphantsi kwaye lisetyenziswe ngempumelelo iminyaka emininzi.