I-RBSiC/SiSiC Reaction Bonded Silicon Carbide

ISIBUYEKEZO SE-SILICON CARBIDE ESIBOPHILE ESIPHENDULWE YI-REAction
I-silicon carbide eboshiwe yokusabela, ngezinye izikhathi ibizwa ngokuthi i-siliconized silicon carbide.

Ukungena kunikeza izinto inhlanganisela eyingqayizivele yezakhiwo zemishini, ezishisayo, kanye nezikagesi ezingalungiswa ukuze zivumelane nohlelo lokusebenza.

I-Silicon Carbide ingenye yezinto zobumba ezinzima kakhulu, futhi igcina ubulukhuni namandla emazingeni okushisa aphezulu, okuhunyushwa kube phakathi kokumelana okuhle kakhulu nokuguguleka. Ngaphezu kwalokho, i-SiC ine-conductivity ephezulu yokushisa, ikakhulukazi ebangeni le-CVD (chemical vapor deposition), elisiza ekumelana nokushaqeka kokushisa. Futhi liyingxenye yesisindo sensimbi.

Ngokusekelwe kulolu xhumano lobunzima, ukumelana nokuguguleka, ukushisa nokugqwala, i-SiC ivame ukucaciswa ubuso be-seal kanye nezingxenye zephampu ezisebenza kahle kakhulu.

I-Reaction Bonded SiC inendlela yokukhiqiza ebiza kancane kakhulu ene-course grain. Inikeza ubulukhuni obuphansi kanye nokushisa kokusetshenziswa, kodwa ihlinzeka ngokushisa okuphezulu.

I-Direct Sintered SiC ingcono kune-Reaction Bonded futhi ivame ukunqunyelwa umsebenzi wokushisa okuphezulu.