ʻO ka Silicon Carbide i hoʻopaʻa ʻia me ka hopena RBSiC/SiSiC

NĀNĀWAI O KA SILICON CARBIDE I HOʻOPILI ʻIA I KA REACTION
ʻO ka silicon carbide i hoʻopaʻa ʻia i ka hopena, i kekahi manawa i kapa ʻia ʻo ka silicon carbide siliconized.

Hāʻawi ka infiltration i ka mea i kahi hui kūikawā o nā waiwai mechanical, thermal, a me nā uila i hiki ke hoʻololi ʻia i ka noi.

ʻO Silicon Carbide kekahi o nā keramika paʻakikī loa, a mālama i ka paʻakikī a me ka ikaika i nā mahana kiʻekiʻe, ʻo ia hoʻi kekahi o nā pale ʻaʻahu maikaʻi loa. Eia kekahi, he kiʻekiʻe ka conductivity thermal o SiC, ʻoi aku hoʻi ma ka papa CVD (chemical vapor deposition), kahi e kōkua ai i ke kūpaʻa ʻana i ka haʻalulu thermal. ʻO ia hoʻi ka hapalua o ke kaumaha o ke kila.

Ma muli o kēia hui pū ʻana o ka paʻakikī, ke kūpaʻa i ka ʻaʻahu, ka wela a me ka pala, ua kuhikuhi pinepine ʻia ʻo SiC no nā helehelena sila a me nā ʻāpana pamu hana kiʻekiʻe.

ʻO ka Reaction Bonded SiC ka ʻenehana hana haʻahaʻa loa me kahi hua papa. Hāʻawi ia i ka paʻakikī haʻahaʻa a me ka mahana hoʻohana, akā ʻoi aku ka kiʻekiʻe o ka conductivity thermal.

ʻOi aku ka maikaʻi o ke ʻano o ka Direct Sintered SiC ma mua o ka Reaction Bonded a ua kuhikuhi pinepine ʻia no ka hana wela kiʻekiʻe.