I-RBSiC/SiSiC Reaction Bonded Silicon Carbide

ISISHWANKATHELO SE-SILICON CARBIDE ESIBOPHILEYO
I-silicon carbide ebotshelelweyo yi-reaction, ngamanye amaxesha ibizwa ngokuba yi-silicon carbide.

Ukungena ngaphakathi kunika le nto indibaniselwano eyahlukileyo yeempawu zoomatshini, zobushushu, nezombane ezinokulungiswa ukuze zihambelane nosetyenziso.

I-Silicon Carbide yenye yezona ceramics zinzima, kwaye igcina ubulukhuni kunye namandla kumaqondo obushushu aphezulu, nto leyo ethetha ukuba yenye yezona zibalaseleyo zokungagugi. Ukongeza, i-SiC ine-thermal conductivity ephezulu, ingakumbi kwi-CVD (chemical vapor deposition), enceda ekuchaseni ubushushu. Ikwayisiqingatha sobunzima bentsimbi.

Ngokusekelwe kolu didi lobunzima, ukumelana nokuguguleka, ubushushu kunye nokugqwala, iSiC idla ngokuchazwa kwiindawo zokutywina kunye neendawo zepompo ezisebenza kakuhle.

I-Reaction Bonded SiC inendlela yokuvelisa ebiza kancinci nge-course grain. Inika ubulukhuni obuphantsi kunye nobushushu bokusetyenziswa, kodwa inika ubushushu obuphezulu.

I-Direct Sintered SiC ingcono kuneReaction Bonded kwaye idla ngokuchazwa xa kusetyenzwa ngobushushu obuphezulu.