Uthelekiso lwenkqubo yokubumba i-silicon carbide ceramic: inkqubo yokusila kunye neengenelo kunye nokungalungi kwayo

I-silicon carbide ceramicuthelekiso lwenkqubo yokubumba: inkqubo yokusila kunye neengenelo kunye nokungalungi kwayo

Kwimveliso yeeseramikhi ze-silicon carbide, ukwakheka kukho ikhonkco elinye kuphela kuyo yonke le nkqubo. Ukusila yinkqubo ephambili echaphazela ngokuthe ngqo ukusebenza kokugqibela kunye nokusebenza kweeseramikhi. Kukho iindlela ezininzi ezahlukeneyo zokusila iiseramikhi ze-silicon carbide, nganye ineenzuzo kunye neengxaki zayo. Kule posi yebhlog, siza kuhlola inkqubo yokusila iiseramikhi ze-silicon carbide size sithelekise iindlela ezahlukeneyo.

1. Ukusabela okubangela ukudumba kwempendulo:
Ukusinta i-reaction yindlela edumileyo yokwenza izinto ze-silicon carbide ceramics. Le yinkqubo elula nengabizi kakhulu. Ukusinta ifumaneka nge-silicidation reaction kubushushu obuphantsi be-1450 ~ 1600 ° C kunye nexesha elifutshane. Le ndlela inokuvelisa iindawo ezinkulu kunye nemilo entsonkothileyo. Nangona kunjalo, ikwanazo neengxaki zayo. I-siliconizing reaction ngokungenakuphepheka ikhokelela kwi-8% ~ 12% free silicon kwi-silicon carbide, nto leyo enciphisa iipropati zayo zoomatshini ezishushu kakhulu, ukumelana nokugqwala, kunye nokumelana ne-oxidation. Kwaye ubushushu bokusetyenziswa bulinganiselwe ngaphantsi kwe-1350 ° C.

2. Ukucofa okushushu:
Ukutshiza ngoxinzelelo olushushu yenye indlela eqhelekileyo yokutshiza iiseramikhi ze-silicon carbide. Kule ndlela, umgubo we-silicon carbide owomileyo uzaliswa ube yimold kwaye ufudunyezwe ngelixa usebenzisa uxinzelelo oluvela kwicala elinye. Oku kufudumeza kunye noxinzelelo ngaxeshanye kukhuthaza ukusasazeka kwamasuntswana, ukuhamba, kunye nokudluliselwa kobunzima, okubangela iiseramikhi ze-silicon carbide ezineenkozo ezincinci, uxinano oluphezulu, kunye neempawu ezintle zoomatshini. Nangona kunjalo, ukutshiza ngoxinzelelo olushushu nako kuneengxaki zako. Le nkqubo iyinkimbinkimbi ngakumbi kwaye ifuna izixhobo kunye nezixhobo zokutshiza ezikumgangatho ophezulu. Ukusebenza kakuhle kwemveliso kuphantsi kwaye ixabiso liphezulu. Ukongeza, le ndlela ifanelekile kuphela kwiimveliso ezineemilo ezilula.

3. Ukucofa okushushu kwe-isostatic:
Ukutshiza okushushu kwe-isostatic (HIP) yindlela ebandakanya isenzo esidibeneyo segesi enoxinzelelo oluphezulu oluphezulu kunye negesi enoxinzelelo oluphezulu olulinganiselweyo nge-isotropically. Isetyenziselwa ukutshiza kunye nokuqinisa umgubo we-silicon carbide ceramic, umzimba oluhlaza okanye umzimba osikiweyo ngaphambili. Nangona ukutshiza kwe-HIP kunokuphucula ukusebenza kwe-silicon carbide ceramics, ayisetyenziswa kakhulu kwimveliso yobuninzi ngenxa yenkqubo enzima kunye neendleko eziphezulu.

4. Ukucoca ngaphandle koxinzelelo:
Indlela yokusila ngaphandle koxinzelelo yindlela esebenza kakuhle kakhulu kubushushu obuphezulu, inkqubo elula yokusila kunye nexabiso eliphantsi le-silicon carbide ceramics. Ikwavumela iindlela ezininzi zokwenza, okwenza ifaneleke kwiimo ezinzima kunye neendawo ezityebileyo. Le ndlela ifanelekile kakhulu kwimveliso enkulu ye-silicon ceramics kwimizi-mveliso.

Ngamafutshane, inkqubo yokusila yinyathelo elibalulekileyo ekuvelisweni kweeseramikhi zeSiC. Ukukhethwa kwendlela yokusila kuxhomekeke kwizinto ezifana neempawu ezifunwayo zeseramikhi, ubunzima bobume, iindleko zemveliso kunye nokusebenza kakuhle. Indlela nganye ineenzuzo kunye neengxaki zayo, kwaye kubalulekile ukuqwalasela ngononophelo ezi zinto ukuze kuchongwe inkqubo yokusila efanelekileyo kwisicelo esithile.